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박정민,Fumiya Gotoda,Takeshi Kanashima,Masanori Okuyama,Seiji Nakashima 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.31
Polycrystalline BiFeO_3 thin film has been prepared on indium tin oxide (ITO)-coated glass substrate at 520^oC by pulsed laser deposition (PLD). The XRD pattern shows a polycrystalline perovskite phase and (010) preferred orientation. Higher deposition temperature for BFO thin film on ITO substrate was required for crystallization, compared to that of BFO thin film grown on Pt substrate. Grain size becomes smaller than that of the BFO thin film on Pt substrate and leakage current density is decreased. Optical transmittance is about 80 % around 780 nm and the direct band gap (E_g) is 2.72 ± 0.03 eV. P-E hysteresis loop of the BFO thin film on ITO substrate was obtained at RT and polarization difference at zero electric field (2P_(ro)), corresponding to the double remanent polarization was 140 μ/cm^2. The M-H hysteresis loop was obtained at RT and antiferromagnetic behavior is little affected by difference of the substrate.