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Growth of Amorphous InGaN Films on Si for Potential Photovoltaic Application
Wang Ting,Mo Guankong,Zhao Hongli,Yao Juan,Zou Zhuoliang,Fu Yuechun,Shen Xiaoming,He Huan 대한전기학회 2022 Journal of Electrical Engineering & Technology Vol.17 No.2
Amorphous InGaN fi lms were deposited on p-Si(100) substrates using a self-refi ted pulsed laser deposition system with double laser light paths and two-component target. The eff ects of laser energy on the microstructure, electrical and photovoltaic performances of InGaN fi lms as well as n-InGaN/p-Si heterojunction solar cells were investigated. The results show that all the fi lms are rich in Ga and poor in In, and the (In + Ga)/N atomic ratios are greater than 1. As the laser energy increases, In composition increases gradually and reaches to a maximum of 4.6 at.%. The PL spectra indicates that the band gap of the fi lms decrease with the increase of laser energy. Meanwhile, the resistivity of InGaN fi lm is decreased in two orders of magnitude due to the increasing of carrier concentration. Under the illumination of AM 1.5G solar simulator, the maximum power conversion effi ciency of amorphous n-InGaN/p-Si heterojunction solar cells is 0.73% with an open circuit voltage of 2.41 V and short current density of 0.69 mA/cm 2 at the laser energy of 175 mJ/pulse
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Juan Yao,Guotao Lin,Zhenxi Du,Jun Liang,Huan He,Xiaoming Shen,Yuechun Fu 대한금속·재료학회 2021 ELECTRONIC MATERIALS LETTERS Vol.17 No.4
ZnO nanowires (ZnO NWs) were synthesized by hydrothermal method on Si (100) substrates, in which an insulating MgOlayer deposited using sol–gel method was inserted between the seed layer and Si substrate. The eff ects of MgO layer on themicrostructure, luminescence and electrical properties of ZnO NWs as well as n-ZnO NWs/p-Si heterojunction LEDs wereinvestigated. With the insertion of MgO layer, well-aligned ZnO NWs with good crystalline quality are obtained, which canbe attributed to the smooth seed layer with homogeneous globular particles. The electroluminescence spectra of n-ZnO NWs/MgO/p-Si heterojunction LEDs exhibit a broad emission band from near ultraviolet to yellow-green region. n-ZnO NWs/MgO/p-Si heterojunction also shows an enhanced ultraviolet photoluminescence effi ciency, and its defect-related visibleemission is greatly suppressed compared with that of n-ZnO NWs/p-Si heterojunction. The current–voltage curves of bothheterojunction LEDs present a typical rectifying behavior, but the rectifi cation ratio increases almost 5 times by insertingMgO layer, which is ascribed to a reduction in the leakage current under reverse bias voltage.
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