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Park, Taehyung,Kim, Jang Hyun,Kim, Hyun Woo,Park, Euyhwan,Lee, Junil,Park, Byung-Gook American Scientific Publishers 2016 Journal of Nanoscience and Nanotechnology Vol.16 No.10
<P>A Si capping layer on a SiGe channel is essential to improve the interface properties between the SiGe channel and the gate insulator. Thus, devices with a Si capping layer should be analyzed to understand their electrical characteristics. In this paper, a strained Si/SiGe heterojunction TFET is investigated via capacitance-voltagemeasurements, which are rapid and non-destructive. The C-V analysis method in a strained Si/SiGe heterojunction TFET is improved through TCAD simulations. Through a C-V analysis, important parameters pertaining to devices, such as the layer thicknesses and threshold voltages, can be extracted.</P>
Kwon, Dae Woong,Kim, Jang Hyun,Park, Euyhwan,Lee, Junil,Park, Taehyung,Lee, Ryoongbin,Kim, Sihyun,Park, Byung-Gook Institute of Pure and Applied Physics 2016 Japanese Journal of Applied Physics Vol.55 No.6
<P>A novel fabrication method is proposed to reduce large gate-to-drain capacitance (CGD) and to improve AC switching characteristics in tunnel field-effect transistor (TFETs) with elevated drain (TFETED). In the proposed method, gate oxide at drain region (GDOX) is selectively formed through oxide deposition and spacer-etch process. Furthermore, the thicknesses of the GDOX are simply controlled by the amount of the oxide deposition and etch. Mixed-mode device and circuit technology computer aided design (TCAD) simulations are performed to verify the effects of the GDOX thickness on DC and AC switching characteristics of a TFETED inverter. As a result, it is found that AC switching characteristics such as output voltage pre-shoot and falling/rising delay are improved with nearly unchanged DC characteristics by thicker GDOX. This improvement is explained successfully by reduced CGD and positive shifted gate voltage (VG) versus CGD curves with the thicker GDOX. (C) 2016 The Japan Society of Applied Physics</P>
시뮬레이션을 통한 Tunneling Field Effect Transistor의 온도와 트랩 분포에 따른 전류 전달 특성 분석
이기태(Kitae Lee),이륭빈(Ryoongbin Lee),권대웅(Dae Woong Kwon),박의환(Euyhwan Park),이준일(Junil Lee),김시현(Sihyun Kim),박태형(Taehyung Park),김현민(Hyun-Min Kim),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Tunneling field effect transistor (TFET) has been expected to replace conventional metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. The traps in transistor can influence I-V characteristic of transistor. In this study, we investigate current transfer characteristics of TFET by temperature and trap distribution.
Analysis on temperature dependent current mechanism of tunnel field-effect transistors
Lee, Junil,Kwon, Dae Woong,Kim, Hyun Woo,Kim, Jang Hyun,Park, Euyhwan,Park, Taehyung,Kim, Sihyun,Lee, Ryoongbin,Lee, Jong-Ho,Park, Byung-Gook IOP Publishing 2016 Japanese journal of applied physics Vol.55 No.6
<P>In this paper, the total drain current (I-D) of a tunnel FET (TFET) is decomposed into each current component with different origins to analyze the ID formation mechanisms of the TFET as a function of gate voltage (V-GS). Transfer characteristics are firstly extracted with fabricated Silicon channel TFETs (Si TFETs) and silicon germanium channel TFETs (SiGe TFETs) at various temperatures. The subthreshold swings (SS) of both Si TFETs and SiGe TFETs get degraded and the SSs of SiGe TFETs get degraded more as temperature becomes higher. Then, all the I(D)s measured at various temperatures are decomposed into each current component through technology computer aided design (TCAD) simulations with a good agreement with experimental data. As a result, it is revealed that Shockley-Read-Hall (SRH) recombination mainly contribute to the I-D of a TFET before band to band tunneling (BTBT) occurs. Furthermore, the SS degradation by high temperature is explained successfully by the SRH recombination with electric field dependence. (C) 2016 The Japan Society of Applied Physics</P>
시뮬레이션을 통한 TFET 소자에서의 Source-to-Gate Underlap/Overlap 길이에 따른 특성 변화 연구
김현민(Hyun-Min Kim),이준일(Junil Lee),권대웅(Dae Woong Kwon),박의환(Euyhwan Park),김시현(Sihyun Kim),이륭빈(Ryoongbin Lee),박태형(Taehyung Park),이기태(Kitae Lee),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Tunneling field effect transistor (TFET) has been investigated as a substitute for a conventional metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. Especially, the vertical TFET has been studied because it has high denity and merit for fabrication. In this paper, the source -to-gate underlap/overlap - dependent characteristic of TFET arising from a gate etch process in vertical TFET is investigated through a technology computer aided design (TCAD) simulation.
시뮬레이션을 통한 Double Gate Tunneling Field Effect Transistor의 최적화 연구
김현민(Hyun-Min Kim),이준일(Junil Lee),권대웅(Dae Woong Kwon),김장현(Jang Hyun Kim),박의환(Euyhwan Park),김시현(Sihyun Kim),박태형(Taehyung Park),이륭빈(Ryoongbin Lee),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Tunneling field effect transistor (TFET) is expected to replace conventional Metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. However, its relatively low on-current has still remained as a problem. This paper suggests the way to optimize TFET using technology computer aided design (TCAD) simulation. The effect of band gap energy and body thickness on the transfer characteristic was investigated.
Kim, Garam,Park, Euyhwan,Kim, Jang Hyun,Bae, Jong-Ho,Kang, Dong Hoon,Park, Byung-Gook Institute of Pure and Applied Physics 2014 Japanese Journal of Applied Physics Vol. No.
<P>A reversible increase in the current of InGaN-based blue LEDs is observed when constant forward voltage is applied. This characteristic is assumed to be the result of trapping process, and a trap activation energy of 0.30 eV is extracted. Through a numerical simulation, it is confirmed that the multi-quantum well (MQW) barrier height is reduced by the hole trapping process and that the current is increased by lowering this barrier. We also confirmed the effect of this trap on the optical characteristics of InGaN-based blue LEDs by a numerical simulation and measurement. (C) 2014 The Japan Society of Applied Physics</P>
Kim, Garam,Kim, Janghyun,Park, Euyhwan,Kang, Donghoon,Park, Byung-Gook Institute of Pure and Applied Physics 2014 Japanese Journal of Applied Physics Vol. No.
<P>In this work, a novel structure for GaN-based LED featuring p-AlGaN trench in the MQW is proposed. Through a numerical simulation, it is confirmed that the proposed structure shows much uniform hole distribution in the MQW than that of the conventional structure, because holes are injected efficiently into the MQW along the p-AlGaN trench. We also confirmed that efficiency droop is reduced and the IQE is improved about 12% when 1A current flows because of the improved hole distribution. In order to optimize the physical parameters of the p-AlGaN trench, the IQE and the operating voltage are analyzed when the width of the p-AlGaN trench and the distance between the p-AlGaN trenches are changed. In addition, a simple fabrication process for manufacturing the proposed structure is also suggested. (C) 2014 The Japan Society of Applied Physics</P>