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Uniformity Improvement of the Ion Implantation System for Low Temperature Poly-Silicon TFTs
Toshiharu Suzuki,Eiji Isobe,Hirohiko Murata,Kazuya Yoshida,Kouji Inada,Masateru Sato,Tatsuo Nishihara 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Performance of the an ion-implantation system for low-temperature poly-Si TFT was improved to meet various requirements for fabrication of high-quality LCD and OLED displays. With the unique inductively coupled plasma ion source, the deviation of ion beam current density was reduced to less than 3 %; 1 over 730 × 920 mm substrate. The “mini”-uniformity in a display panel was also improved by optimizing the ion beam extraction electrodes.