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Analysis of Insulating Characteristics of Cl₂-He Mixture Gases in Gas Discharges
Do Anh Tuan 대한전기학회 2015 Journal of Electrical Engineering & Technology Vol.10 No.4
Insulating characteristics of Cl2-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)lim, for these binary gas mixtures were also derived and compared with those of the pure SF6 gas.
Calculations of Electron Transport Coefficients in Cl2-Ar, Cl2-Xe and Cl2-O2 Mixtures
Do Anh Tuan 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
In order to understand quantitatively plasma phenomena and ionized gases, accurate electroncollision cross-sections and electron transport coefficients for not only pure atoms and moleculesbut also for the binary gas mixtures are necessary. Electron transport coefficients (electron driftvelocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionizationcoefficient) in mixture gases of Cl2 with Ar, Xe and O2, therefore, were calculated andanalyzed by using a two-term approximation of the Boltzmann equation over a wide E/N range(ratio of the electric field E to the neutral number density N). The limiting field strength values ofE/N, (E/N)lim, for these binary gas mixtures were also derived and compared with those of pureSF6 gas. These binary gas mixtures are being considered for use in many industries, depending onthe mixture ratio and the particular application of the gas and the electrical equipment.
Do Anh Tuan,전병훈 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.4
The electron collision cross-section for a fluorine molecular gas, which is necessary for modeling electron diffusion in a plasma reactor, has been determined included. This cross-section includes the vibrational excitation cross-section for F_2 molecule. We have calculated the electron drift velocities in two F_2-He mixtures (with 0.2% and 1% fluorine) and in pure F_2 by using the determined crosssections and a two-term approximation of the Boltzmann equation for the energies. The results agree well with available experimental data for the electron drift velocity over a wide range of E/N (ratio of the electric field, E, to the neutral number density N). The present cross-sections may be important for quantitatively modeling plasma discharges for processing procedures with materials containing fluorine molecules.
Do Anh Tuan 대한전기학회 2016 Journal of Electrical Engineering & Technology Vol.11 No.2
The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10<SUP>-17 </SUP>V.cm2). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.
Analysis of Insulating Characteristics of Cl<sub>2</sub>-He Mixture Gases in Gas Discharges
Tuan, Do Anh The Korean Institute of Electrical Engineers 2015 Journal of Electrical Engineering & Technology Vol.10 No.4
Insulating characteristics of Cl<sub>2</sub>-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl<sub>2</sub>-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)<sub>lim</sub>, for these binary gas mixtures were also derived and compared with those of the pure SF<sub>6</sub> gas.
Do Anh Tuan,전병훈 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.5
An electron collision cross-section is necessary for modeling electron diffusion in a plasma reactor. We have determined the electron collision cross-sections included with the momentum transfer cross-section for Cl2 molecule. The electron drift velocities have been calculated in a 20% Cl2-He mixture and in pure Cl2 by using the determined cross-sections and a two-term approximation of the Boltzmann equation for the energy. The results agree well with available experimental data for the electron drift velocity over a wide range of reduced electric fields, E/N (ratio of the electric field, E, to the neutral number density N). The present cross-sections may be important for quantitatively modeling of related plasmas.
0.2 V 8T SRAM With PVT-Aware Bitline Sensing and Column-Based Data Randomization
Do, Anh Tuan,Lee, Zhao Chuan,Wang, Bo,Chang, Ik-Joon,Liu, Xin,Kim, Tony Tae-Hyoung IEEE 2016 IEEE journal of solid-state circuits Vol.51 No.6
<P>In sub/near-threshold operation, SRAMs suffer from considerable bitline swing degradation when the data pattern of a column is skewed to '1' or '0'. The worst scenarios regarding this problem occur when the currently read SRAM cell has different data compared to the rest of the cells in the same column. In this work, we overcome this challenge by using a column-based randomization engine (CBRE). This CBRE circuit randomizes data stored to SRAM. This makes distribution of '1' and '0' in each column close to 50%, significantly increasing bitline swing. To further improve the bitline swing, we employ bitline boost biasing and dynamic bitline keeper schemes. Based on the mentioned techniques, we fabricated a 256 rows x 128 columns (32Kb) 8T SRAM array in 65 nm CMOS technology. In our silicon measurement, the SRAM array shows successful 200 mV operation at room temperature, where energy consumption and access time are 1 pJ and 2.5 s, respectively.</P>
Homogeneous Disturbance Observer Based on Sliding Mode Observer and Controller for T-Type Inverter
Do Tuan Anh,Pham Quoc Huy,Giap Van Nam,Nguyen Quang Dich,Vu Phuong 대한전기학회 2024 Journal of Electrical Engineering & Technology Vol.19 No.3
This paper proposes a novel sliding mode control (SMC) for the T-Type inverter in the standalone mode. Firstly, the accuracy of the estimated states used to construct the fxed-time SMC and the disturbance observer (DOB) is improved by a proposed sliding mode observer (SMO). Secondly, a DOB is designed without the requirement of the frst derivative or the format of the disturbance. Thirdly, an advanced reaching law is utilized for both the SMO, the DOB, and the SMC controller for the chattering elimination. Fourth, the stability of the proposed controller is confrmed by the Lyapunov condition. The performance of the proposed control strategy is validated by simulations and experiments with the same scenarios of nonlinear load and parameter variations. The results prove that the output voltage of the proposed control method meets the standard EN 62040 with the total harmonic distortion being lower than 5% in all cases, which is superior to the performance of the traditional controller.
Do, Anh Tuan,Zeinolabedin, Seyed Mohammad Ali,Jeon, Dongsuk,Sylvester, Dennis,Kim, Tony Tae-Hyoung IEEE 2019 IEEE transactions on very large scale integration Vol.27 No.1
<P>This paper presents a power- and area-efficient spike sorting processor (SSP) for real-time neural recordings. The proposed SSP includes novel detection, feature extraction, and improved K-means algorithms for better clustering accuracy, online clustering performance, and lower power and smaller area per channel. Time-multiplexed registers are utilized in the detector for dynamic power reduction. Finally, an ultralow-voltage 8T static random access memory (SRAM) is developed to reduce area and leakage consumption when compared to D flip-flop -based memory. The proposed SSP, fabricated in 65-nm CMOS process technology, consumes only 0.175 <TEX>$\mu \text{W}$</TEX>/channel when processing 128 input channels at 3.2 MHz and 0.54 V, which is the lowest among the compared state-of-the-art SSPs. The proposed SSP also occupies 0.003 mm<SUP>2</SUP>/channel, which allows 333 channels/mm<SUP>2</SUP>.</P>