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JongHyeobBaeK,HyunWooSong,SungBockKim,NamHwang,JehaKim,DaeKonOh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.3
We investigated the degradation behaviors of 1310-nm spot-size converter integrated laser diodes (SSC-LDs) grown by using the metal-organic chemical-vapor deposition (MOCVD) method. The vertically tapered SSC and the active region employing a buried heterostructure were butt-jointed to each other. The characteristic temperature of the SSC-LD was compared with that of an LD without the SSC. All chips experienced the burn-in test before long-term life scanning. The slope eciencies of the SSC-LDs scarcely changed after the aging process, indicating that no further degradation accurred within the active region. This work focused mainly on the role of the SSC in device degradation behavior.
Ho-Sang Kwack,조용훈,Sung Bum Bae,DaeKonOh,Kyu Seok Lee,Chang Soo Kim 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.46 No.1
AlxGa1−xN/GaN films were grown on sapphire substrate by using metalorganic chemical vapor deposition, and their structural, electrical, and optical properties were systematically investigated by using atomic force microscopy, high-resolution X-ray diffraction (HRXRD), Hall measurements, and photoluminescence (PL). The strain states and the mosaic properties of the AlGaN and GaN layers were studied by using the (10·5) asymmetric reciprocal space maps (RSMs). From the RSMs, we confirmed that the crystal lattice of the Al0.13Ga0.89N film was fully strained and that the crystal quality was good. From the PL and the HRXRD data, we observed that a certain range of Si doping could cause a small variation of Al incorporation during the growth of the AlGaN film, resulting in a variation in the Al content and the crystal quality of the AlGaN layer. From the results, we conclude that moderate Si-doping improves the optical and the structural properties of Al0.11Ga0.89N films.