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Zong Yang,Huang Hui,Zhao Danna,Tang Zhenan 한국물리학회 2020 Current Applied Physics Vol.20 No.7
It was firstly demonstrated that the resistance of bridging GaN nanowires (NWs) can be in situ controlled via current driven self-heating. Owning to the absence of contact barrier at the electrodes of bridging NWs, the Joule-heating can be generated mainly on the NW itself rather than on the electrodes. With increase of NW biasvoltage (BiV) from 2.5 V to 10 V, the generated Joule-heating can make the NW oxidized in air, which leads to about 700 fold increase in NW resistance (from 82.5 Ω to 6 × 104 Ω). Theoretical simulation indicated that a NW temperature of 649 K can realized with a BiV of 4 V, which agrees well with the observation of thermal emission microscope. Moreover, the measured oxygen composition in the NWs was increased with increasing BiV, which indicates that the NWs were oxidized by BiV induced self-heating. This work provides a simple method for precise control of NW resistance, which can be further applied to the formation of core/shell NWs with real time monitoring.
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ELECTRONIC STRUCTURES AND TRANSPORT PROPERTIES OF SINGLE CRYSTALLINE GaN NANOTUBES
ENLING LI,LIPING HOU,ZHEN CUI,DANNA ZHAO,MANCANG LIU,XUEWEN WANG 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2012 NANO Vol.7 No.3
The electronic structures and transport properties of single crystalline GaN nanotubes with 0.92nm inner diameter and di®erent wall thicknesses of 0.08 nm, 0.26 nm and 0.54 nm are studied based on the generalized gradient approximation (GGA) of density functional theory (DFT) and the nonequilibrium green's function (NEGF). The research shows that (1) the three single crystalline GaN nanotubes have direct band gaps, decreasing with the increase of wall thickness;(2) the electronic density of state and electronic transmission spectra of two-probe system have their own pulse-type sharp peaks with almost the same location of electron energy; (3) under di®erent bias-voltages, two-probe systems of the single crystalline GaN nanotubes have the I?V properties which reveal that the single-wall GaN nanotube and the single-layer GaN nanotube are semiconducting and the double-layer GaN nanotube appears nearly metallic.
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