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송오성,정성희,정영순 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
The silicide layer used as a diffusion barrier in microelectronics is typically required to be below 500.E thick, and the silicides also need to have low contact resistance at high processing temperatures. We fabricated 150ÅNi/150A-Co/p-Si(100) samples with a thermal evaporator, and annealed the samples for 40 seconds at temperatures ranging from 700℃ to 1100℃ using rapid thermal annealing. Sheet resistance of the annealed sample stack was measured with a four point probe. In addition, we investigated microstructural and compositional changes during annealing using transmission electron microscopy and auger electron spectroscopy. The sheet resistance measurements for our proposed Ni/Co composite silicide was below 5 Ω/Sq.. Moreover our newly proposed silicides were stable with the additional elevated annealing at 900℃ for 30 min. Microstructures and Auger depth profiling showed that the silicides in our samples were consisted of Ni-rich and Co-rich ternary compound. Our result implies that Ni/Co composite silicide may have excellent high temperature stability which can be employed in sub-0.1 μm CMOS process. (Received September 24, 2004)
송오성,정성희,김득중,Song Ohsung,Cheong Seonghwee,Kim Dugjoong 한국재료학회 2004 한국재료학회지 Vol.14 No.12
NiCo silicide films have been fabricated from $300{\AA}-thick\;Ni_{1-x}Co_{x}(x=0.1\sim0.9)$ on Si-substrates by varying RTA(rapid thermal annealing) temperatures from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 sec. Sheet resistance, cross-sectional microstructure, and chemical composition evolution were measured by a four point probe, a transmission electron microscope(TEM), and an Auger depth profilemeter, respectively. For silicides of the all composition and temperatures except for $80\%$ of the Ni composition, we observed small sheet resistance of sub- $7\;{\Omega}/sq.,$ which was stable even at $1100^{\circ}C$. We report that our newly proposed NiCo silicides may obtain sub 50 nm-thick films by tunning the nickel composition and silicidation temperature. New NiCo silicides from NiCo-alloys may be more appropriate for sub-0.1${\mu}m$ CMOS process, compared to conventional single phase or stacked composit silicides.
코발트/니켈 적층구조 박막으로부터 형성된 복합실리사이드
송오성,정성희,김득중,최용윤,Song Ohsung,Cheong Seonghwee,Kim Dugjoong,Choi Yongyun 한국재료학회 2004 한국재료학회지 Vol.14 No.11
15 nm-Co/15 nm-Ni/P-Si(100)[Type I] and 15 nm-Ni/15 nm-Co/P-Si(100)(Type II) bilayer structures were annealed using a rapid thermal annealer for 40sec at $700/sim1100^{\circ}C$. The annealed bilayer structures developed into composite NiCo silicides and resulting changes in sheet resistance, composition and microstructure were investigated using Auger electron spectroscopy and transmission electron microscopy. Prepared NiCoSix films were further treated in a sequential annealing set up from $900\sim1100^{\circ}C$ with 30 minutes. The sheet resistances of NiCoSix from Type I maintained less than $7\;{\Omega}/sq$. even at the temperature of $1100{\circ}C$, while those of Type II showed about $5\;{\Omega}/sq$. with the thinner and more uniform thickness. With the additive post annealing, the sheet resistance for all the composite silicides remained small up to $900^{\circ}C$. The proposed NiCoSix films were superior over the conventional single-phased silicides and may be easily incorporated into the sub-0.1 ${\mu}m$ process.