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Electromagnetic propagation in nanostructures
Michael A. Mastro,Charles R. Eddy Jr.,김지현,R. T. Holm 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1
Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1]. Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1].
Plasmonically enhanced emission from a group-III nitride nanowire emitter
Mastro, Michael A,Freitas Jr, Jaime A,Glembocki, Orest,Eddy Jr, Charles R,Holm, R T,Henry, Rich L,Caldwell, Josh,Rendell, Ronald W,Kub, Fritz,Kim, J IOP Pub 2007 Nanotechnology Vol.18 No.26
<P>The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.</P>
Michael A. Mastro,김병재,정영훈,Jennifer K. Hite,Charles R. Eddy Jr.,김지현 한국물리학회 2011 Current Applied Physics Vol.11 No.3
Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO_2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.
Jaehui Ahn,Geunwoo Ko,김지현,Michael A. Mastro,Jennifer Hite,Charles R. Eddy Jr. 한국물리학회 2010 Current Applied Physics Vol.10 No.2
This paper demonstrates the manipulation of neutral dielectric wires with high aspect ratio by a pulsed electric field. Dielectrophoretic (DEP) force and torque were employed to align the randomly positioned GaN nano- and micro-wires. A simulation of the DEP force alignment process confirmed the experimentally observed dependence on alignment yield to frequency and bias of the electric field. Current–voltage measurements of the GaN micro-wires, aligned by DEP force and torque to pre-patterned metal contacts,confirms that the direct manipulation of micro-sized wire with an electric field oscillated at a frequency of 10 kHz–5 MHz.
Group III-nitride radial heterojunction nanowire light emitters
Michael A. Mastro,Josh Caldwell,Mark Twigg,Blake Simpkins,Orest Glembocki,Ron T. Holm,Charles R. Eddy, Jr.,Fritz Kub,김홍렬,Jaehui Ahn,김지현 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.