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Bongki Mheen,송영주,강진영,Songcheol Hong 한국전자통신연구원 2005 ETRI Journal Vol.27 No.4
We introduce a strained-SiGe technology adopting different thicknesses of Si cap layers towards low power and high performance CMOS applications. By simply adopting 3 and 7 nm thick Si-cap layers in n-channel and p-channel MOSFETs, respectively, the transconductances and driving currents of both devices were enhanced by 7 to 37% and 6 to 72%. These improvements seemed responsible for the formation of a lightly doped retrograde high-electron-mobility Si surface channel in nMOSFETs and a compressively strained high-hole-mobility Si0.8Ge0.2 buried channel in pMOSFETs. In addition, the nMOSFET exhibited greatly reduced subthreshold swing values (that is, reduced standby power consumption), and the pMOSFET revealed greatly suppressed 1/f noise and gate-leakage levels. Unlike the conventional strained-Si CMOS employing a relatively thick (typically > 2 μm) SixGe1-x relaxed buffer layer, the strained-SiGe CMOS with a very thin (20 nm) Si0.8Ge0.2 layer in this study showed a negligible self-heating problem. Consequently, the proposed strained-SiGe CMOS design structure should be a good candidate for low power and high performance digital/analog applications.
High-resolution three-dimensional laser radar with static unitary detector
Mheen, Bongki,Shim, Jea-Sik,Oh, Myoung,Song, Jungho,Song, Minhyup,Choi, Gyu,Seo, Hongsoek,Kwon, Yong-Hwan IET 2014 Electronics letters Vol.50 No.4
<P>A new simple method to obtain real-time high-resolution three-dimensional (3D) images based on a static unitary detector (STUD) is reported. The STUD consists of a common bias network, a partitioned photodetector, a preamplifier array and a combiner, which makes it possible to easily increase the effective photo-detection area for a wider 3D image acquisition without affecting the ability to detect short laser pulses for high-resolution 3D images. From an implemented experimental prototype based on a STUD, the intensity and 3D images with a very high resolution (320 pixels × 240 pixels) were obtained. The achieved range resolution and the spatial resolution of remote 3D objects at 50 m were measured to be <;0.3 and 1.1 cm, respectively.</P>
Lee, Eun-Gyu,Lee, Jae-Eun,Song, Minhyup,Choi, Gyu Dong,Mheen, Bongki,Jung, Bang Chul,Kim, Choul-Young Springer New York LLC 2018 Analog Integrated Circuits and Signal Processing Vol.94 No.3
<P>A fully integrated 4-to-1 transimpedance combining amplifier (TICA)-based static unitary detector (STUD) is developed for high-resolution of laser detection and ranging (LADAR) sensor. With a developed TICA, the STUD is able to have an effective large-area photodetector to enlarge the region of interest (ROI) without the bandwidth deterioration of a receiver for LADAR sensor. The 4-to-1 TICA is fabricated using 0.18-mu m standard CMOS technology and it consists of four independent current buffers, a two-stage signal combiner, a balun, an output buffer, and four over-current protectors in one single integrated chip. The core of the TICA dissipates a power of about 7.8 mW. The total power consumption, including that of the balun and the output buffer, is 41 mW from a 1.8-V supply. The average input-referred noise current spectral density is 15.4 pA/aeHz with a bandwidth of 185 MHz and a transimpedance gain of 70 dB Omega. The developed TICA occupies an active area of approximately 107 mu m x 102 mu m and the die size, including the I/O pads, is 912 mu m x 1000 mu m. From the two-dimensional optical pulse scanning measurements and the three-dimensional (3-D) range measurements, it is verified that the designed TICA is suitable for the receiver front-end of the STUD-based LADAR sensor.</P>