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- 저자 : B. V. K. Vijaya Kumar (검색결과 2 건)
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Redundancy Allocation in Finite-Length Nested Codes for Nonvolatile Memories
김용준,B. V. K. Vijaya Kumar 한국통신학회 2018 Journal of communications and networks Vol.20 No.4
In this paper, we investigate the optimum way to allocateredundancy of finite-length nested codes for modern nonvolatilememories suffering from both permanent defects and transient errors(erasures or random errors). A nested coding approach suchas partitioned codes can handle both permanent defects and transienterrors by using two parts of redundancy: 1) Redundancy todeal with permanent defects and 2) redundancy for transient errors. We consider two different channel models of the binary defectand erasure channel (BDEC) and the binary defect and symmetricchannel (BDSC). The transient errors of the BDEC are erasuresand the BDSC’s transient errors are modeled by the binarysymmetric channel, respectively. Asymptotically, the probabilityof recovery failure can converge to zero if the capacity region conditionsof nested codes are satisfied. However, the probability ofrecovery failure of finite-length nested codes can be significantlyvariable for different redundancy allocations even though they allsatisfy the capacity region conditions. Hence, we formulate the redundancyallocation problem of finite-length nested codes to minimizethe recovery failure probability. We derive the upper boundson the probability of recovery failure and use them to estimate theoptimal redundancy allocation. Numerical results show that ourestimated redundancy allocation matches well the optimal redundancy allocation.
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Writing on Dirty Flash Memory: Combating Inter-Cell Interference via Coding with Side Information
Yongjune Kim,Euiseok Hwang,B. V. K. Vijaya Kumar 한국통신학회 2022 Journal of communications and networks Vol.24 No.6
High-density flash memories suffer from inter-cell interference (ICI) which threatens the reliability of stored data. In order to cope with the ICI problem, we propose a channel coding scheme with channel state information of flash memories (i.e., side information of ICI). This side information is obtained before writing data into flash memories and incorporated during the encoding stage. We show that flash memories under ICI problem can be transformed into the model of memory with defective cells due to the unique asymmetry property between write (page write) and erase (block erase) operations. Then, the channel coding for memory with defective cells is employed to combat ICI. Simulation results support that the proposed scheme with the ICI side information can effectively improve the decoding failure probability.
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