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A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200μm Thick GaAs MMICs
Rawal, D.S.,Agarwal, Vanita R.,Sharma, H.S.,Sehgal, B.K.,Muralidharan, R. The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.3
An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for $60{\mu}m$ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched $200{\mu}m$ deep via profile, at high etch rate. Desired etch profile was obtained at 40 m Torr pressure, 950 W coil power, 90W platen power with an etch rate ${\sim}4{\mu}m$/min and via etch yield >90% over a 3-inch wafer, using $24{\mu}m$ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ${\sim}0.5{\Omega}$ and via inductance value measured was $\sim$83 pH.
A Reproducible High Etch Rate ICP Process for Etching of Via-Hole Grounds in 200 ㎛ Thick GaAs MMICs
D. S. Rawal,Vanita R. Agarwal,H. S. Sharma,B. K. Sehgal,R. Muralidharan 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.3
An inductively coupled plasma etching process to replace an existing slower rate reactive ion etching process for 60 ㎛ diameter via-holes using Cl2/BCl3 gases has been investigated. Process pressure and platen power were varied at a constant ICP coil power to reproduce the RIE etched 200 ㎛ deep via profile, at high etch rate. Desired etch profile was obtained at 40 mTorr pressure, 950 W coil power, 90W platen power with an etch rate ~ 4 ㎛/min and via etch yield >90% over a 3-inch wafer, using 24 ㎛ thick photoresist mask. The etch uniformity and reproducibility obtained for the process were better than 4%. The metallized via-hole dc resistance measured was ~ 0.5 Ω and via inductance value measured was ~ 83 pH.