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Issa, Shams A.M.,Ali, Atif Mossad,Tekin, H.O.,Saddeek, Y.B.,Al-Hajry, Ali,Algarni, Hamed,Susoy, G. Korean Nuclear Society 2020 Nuclear Engineering and Technology Vol.52 No.6
In this study, nuclear radiation shielding and rigidity parameters of Y (0.1-x)B0.6Bi1.8O3La2x glassy system were investigated in order to determine it's suitability for use as nuclear radiation shielding materials. Therefore, a group of bismuth borate glass samples with La<sub>2</sub>O<sub>3</sub> additive were synthesized using the technique of melt quenching. According to the results, the increase of the La<sub>2</sub>O<sub>3</sub> additive increases the density of the glass samples and the mass attenuation coefficient (μ<sub>m</sub>) values, whereas the half-value layer (HVL) and mean free path (MFP) values decrease. The effective atomic number (Z<sub>eff</sub>) is also enhanced with an increment of both mass removal cross section for neutron (Σ<sub>R</sub>) and absorption neutron scattering cross section (σ<sub>abs</sub>). In addition to the other parameters, rigidity parameter values were theoretically examined. The increase of La<sub>2</sub>O<sub>3</sub> causes some other important magnitudes to increase. These are the average crosslink density, the number of bonds per unit volume, as well as the stretching force constant values of these glass samples. These results are in concordance with the increase of elastic moduli in terms of the Makishima-Mackenzie model. This model showed an increase in the rigidity of the glass samples as a function of La<sub>2</sub>O<sub>3</sub>.
Singh Jaspal,Kaur Kulwinder,Islam Ishtihadah,Mir Jan Mohammad,Goyal Megha,Kaur Tavneet,Verma S.S.,Ali Atif Mossad,Khandy Shakeel Ahmad 한국물리학회 2023 Current Applied Physics Vol.50 No.-
This paper presents a detailed discussion of thermoelectric and electronic properties of newly designed Li-based Heusler compounds (LiScPtGe, LiYPtSn, LiYPdPb) using Boltzmann transport theory alongside the first-principles calculations. Our investigations predict that these materials exhibit band gaps 0.76 eV (for LiScPtGe), 0.67 (for LiYPtGe) and 0.21 eV (for LiYPdPb), respectively. All the reported materials are indirect band gap semiconductors; mechanical and dynamical stability is also confirmed. At 300 K, the lowest value of lattice thermal conductivity is observed in LiYPdPb (21.64 Wm-1 K-1), which is very small as compared to the other two materials. The perceived value of the figure of merit (ZT) is 0.61 (for LiScPtGe), 0.52 (for LiYPtSn) and 0.35 (for LiYPdPb) respectively, and probably ensure a considerable thermoelectric efficiency of these newly designed materials.