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Boubaker, Aimen,Sghaier, Nabil,Souifi, Abdelkader,Kalboussi, Adel The Institute of Electronics and Information Engin 2010 Journal of semiconductor technology and science Vol.10 No.2
In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source $V_{Mem}$, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.
Aimen Boubaker,Nabil Sghaier,Abdelkader Souifi,Adel Kalboussi 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.2
In this work, we propose a single electron memory 'SEM' design which consist of two key blocs: A memory bloc, with a voltage source VMem, a pure capacitor connected to a tunnel junction through a metallic memory node coupled to the second bloc which is a Single Electron Transistor "SET" through a coupling capacitance. The "SET" detects the potential variation of the memory node by the injection of electrons one by one in which the drainsource current is presented during the memory charge and discharge phases. We verify the design of the SET/SEM cell by the SIMON tool. Finally, we have developed a MAPLE code to predict the retention time and nonvolatility of various SEM structures with a wide operating temperature range.