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Haider, Adawiya J.,Mousa, Ali M.,Al-Jawad, Selma M.H. The Institute of Electronics and Information Engin 2008 Journal of semiconductor technology and science Vol.8 No.4
In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.
Adawiya J. Haider,Ali M. Mousa,Selma M.H. Al-Jawad 대한전자공학회 2008 Journal of semiconductor technology and science Vol.8 No.4
In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and 500 ℃) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature (300 ℃) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at 300 ℃ for 60 min, and at 350 ℃ for 30 min.