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Argunova, T S,Jung, J W,Je, J H,Abrosimov, N V,Grekhov, I V,Kostina, L S,Rozhkov, A V,Sorokin, L M,Zabrodskii, A G Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.8
<P>Dislocations in p-type Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> single crystals (2–8 at% Ge) grown with the Czochralski technique are investigated by synchrotron white beam topography in transmission geometry. As the Ge concentration increases, the dislocation structure evolves from individual dislocations to slip bands and sub-grain boundaries, and the dislocation density increases from <10<SUP>2</SUP> cm<SUP>−2</SUP> to 10<SUP>5</SUP>–10<SUP>6</SUP> cm<SUP>−2</SUP> at 8 at%. We discuss the effect of dislocations on the electrical characteristics such as resistivity ρ<SUB><I>v</I></SUB>, Hall hole mobility μ<SUB>p</SUB>, carrier lifetime τ<SUB>e</SUB> and <I>I</I>–<I>V</I> characteristics. Here τ<SUB>e</SUB> and <I>I</I>–<I>V</I> characteristics are measured from the diodes fabricated by bonding the p-Si<SUB>1−<I>x</I></SUB>Ge<SUB><I>x</I></SUB> to n-Si wafers. <I>I</I>–<I>V</I> characteristics are not deteriorated in spite of a five times decrease in τ<SUB>e</SUB> with the Ge concentration.</P>
Argunova, T. S.,Yi, J. M.,Jung, J. W.,Je, J. H.,Sorokin, L. M.,Gutkin, M. Yu.,Belyakova, E. I.,Kostina, L. S.,Zabrodskii, A. G.,Abrosimov, N. V. WILEY-VCH Verlag 2007 Physica status solidi. PSS. A, Applications and ma Vol.204 No.8
<P>The defect structure of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> wafers with 4% of germanium and their interfaces with Si wafers were studied using white radiation topography and phase-sensitive radiography. The heterostructures were manufactured by direct bonding of Si<SUB>1–x </SUB>Ge<SUB>x </SUB> and Si crystalline wafers made of bulk crystals that were grown by the Czochralski technique. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB> crystals, the segregations of Ge act as dislocation nucleation sites. In Si<SUB>1–x </SUB>Ge<SUB>x </SUB>/Si bonded structures, the segregation of Ge as well as the accumulation of dislocations induce elastic strain and plastic deformation during high-temperature bonding annealing. With the topography–radiography combination, we are able not only to detect microcracks, indicating nonbonded areas, by radiography, but also to reveal dislocations and long-range strain fields by topography at the same time. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)</P>