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LTPS와 IGZO TFT를 이용한 AMOLED 디스플레이용 CMOS Inverter 회로 구현
김광민(Kwangmin Kim),김준식(Jun Shik Kim),장윤진(Younjin Jang),강석인(Sukin Kang),이용희(Yonghee Lee),김화영(Whayoung Kim),황철성(Cheol Seong Hwang) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
In this paper, a hybrid complementary metal oxide semiconductor (CMOS) inverter composed of p-type lowtemperature poly-crystalline silicon (LTPS) thin-film transistor (TFT) using excimer laser annealing(ELA) of amorphous Si and n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT is reported. The inverter exhibits a full swing output and a large noise margin. With these hybrid TFT circuit components, more power-efficient CMOS digital circuits for active-matrix organic light emitting diode display can be implemented.
PDA 처리에 따른 Al₂O₃ 박막의 interface trapped charge에 의한 hump 현상 감소에 관한 연구
지상엽(Sang-Yeop Jee),서창수(Chang-Su Seo),김윤빈(Yun-Bin Kim),정숙진(Suk-Jin Jeong),박신근(Sin-Keun Park),정재영(Jae-Ryoung Jung),김장현(Jang-Hyun Kim),이종호(Jong-Ho Lee),황철성(Cheol-Seong Hwang) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
We studied the hump phenomenon reduction of AI₂O₃ film using the PDA (Post Deposition Annealing) process. In order to confirm it, we fabricated MOS (Metal Oxide Silicon) capacitor using AI₂O₃ gate insulator, which was deposited by ALD (Atomic layer deposition). Based on the C-V (Capacitance-Voltage) measurement result, hump, which is attributed to near interface traps, was observed in low frequency. We also observed that the hump of AI₂O₃ film is removed through the PDA process.
HDP CVD에서 공정 가스 유량 감소에 따른 D/S ratio의 변화에 의한 Gap-fil 특성 확인
박신근(Sin Keun Park),서창수(Chang-Su Seo),지상엽(Sang-Yeop Jee),김윤빈(Yun-Bin Kim),정숙진(Suk-Jin Jung),김장현(Jang Hyun Kim),김조원(Jo-Won Kim),이종호(Jong Ho Lee),황철성(Cheol Seong Hwang) 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
We studied gap-fill properties by the change of Deposition-Sputter (D/S) ratio through the decrease of silane and oxygen total gas flow in STI process using HDP CVD. D/S ratio was reduced with the decrease of total gas flow. The details of optimized gap-fill condition is discussed in this paper.