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RISS 인기검색어
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전정식(J. S. Jeon),문종(J. Moon),이상인(S. I. Lee),심태언(T. E. Shim),황정남(J. N. Hwang) 한국진공학회(ASCT) 1996 Applied Science and Convergence Technology Vol.5 No.3
기판온도 약 500℃, 진공도 ~10^(-5) Torr에서 이온화된 cluster 빔 증착(ICBD)법으로 Y₂O₃ 박막을 Si(100) 위에 제조하였다. Si의 산화를 억제하기 위해서 얇은 층의 Yttrium막을 형성한후 산소와 Yttrium 원소를 반응증착시켰다. 증착한 상태의 X-선 회절분석에서 b.c. c 및 h.c. p 구조의 Y₂O₃가 관찰되었다. 제한시야 (selected area diffractin:SAD) pattern 분석에서 spot과 ring pattern들이 관찰되었는데 증착중에 결정형성 및 결정성장이 일어났음을 알 수 있었다. 고분해 투과전자현미경(hgih resolution transmition electron microscopy : HRTEM) image에서 Y₂O₃/mixed layer/SiO₂=170Å/50Å/10Å의 구조가 관찰되었으며 비정질상인 SiO₂의 형성에 대해 검토하였다. 증착된 Y₂O₃의 전기적 특성은 Pt/Y₂O₃/Si 구조에서 누설전류 밀도는 10^(-6) A/㎠ 이하로 나타났으며, breakdown 강도는 7㎹/㎝로 나타났다. Y₂O₃ thin film on Si(100) was successfully grown by ionized cluster beam (ICBD) technique at substrate temperature of around 500℃ and pressure of ~10^(-5) Torr. To prevent the oxygen and yttrium source. In as-deposited state, b. c. c and h. c. p structures of Y₂O₃ were observed from X-ray analysis. from the observation of spots and ring pattems in selected area diffractin(SAD) patterns, crystallane formation and growth could be proceeded during the deposition. Y₂O₃/mixed layer/SiO₂=170Å/50Å/10Å structure were verified by high resolution transmition electron imcroscopy (HRTEM) image, and the formation of amorphous layer of SiO₂ was discussed. Electrical charateristics of the film were also investigated. In as-deposited Pt/Y₂O₃/Si structure, leakage current was less than 10^(-6) A/㎠ at 7 ㎹/㎝ strength.
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이온 조사된 Cu / Ni / Cu(001) / Si 자성박막에 있어서 X-ray reflectivity를 이용한 계면 연구
김태곤(T. G. Kim),송종한(J. H. Song),이택휘(T. H. Lee),채근화(K. H. Chae),황현미(H. M. Hwang),전기영(G. Y. Jeon),이재용(J. Lee),정광호(K. Jeong),황정남(C. N. Whang),이준식(J. S. Lee),이기봉(K. B. Lee) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.5
The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2×10^(16) ions/㎠ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.
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