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Laser Ablation에 의하여 $LaAlO_3$(100) 기판 위에 증착된 Y-Ba-Cu-O 박막에 대한 연구
조윌렴,이규철,고도경,이헌주,노태원,김정구,허필화 한국세라믹학회 1991 한국세라믹학회지 Vol.28 No.12
Y-Ba-Cu-O thin films were in-situ fabricated on LaAlO3(100) substrates using the second harmonics of a pulsed Nd:YAG laser. Thin films were deposited under 200 (mtorr) of oxygen atmosphere, when the substrate temperature was changed between 67$0^{\circ}C$ and 82$0^{\circ}C$. After deposition, the films were in-situ annealed at 50$0^{\circ}C$ under 2/3 bar of oxygen pressure. We showed that the deposition temperature affects the formation of superconducting phase, the resistance, and the surface morphology. The Y-Ba-Cu-O thin films deposited at 76$0^{\circ}C$ show the zero resistance critical temperature of 85 K.
장민수,이형철,박영한,이수대,노지현,허필화,김장환 부산대학교 물성연구소 1986 물성연구소연구논문집 Vol.5 No.-
Czochralski 방법으로 Bi₂(Mo0₄)₃ 單結晶을 育成하였으며, 이때 最適育成條件은 1.9∼2.0 mm/hr 引上速度와 12∼13 rpm의 回轉速度가 적합하였다. Bi₂(MoO₄)₃ 單結晶의 단위포는 X-ray 回折法에 의하여 실온에서 Monoclinic 임이 밝혀졌다. 이 結晶에 대한 電氣的 性質의 溫度 依存性을 조사한 결과, 相轉移성이 475±5℃근처에 존재함을 알 수 있었다. A single crystal of Bi₂(MoO₄)₃is grown using the Czochralski method. The optimum growing conditions are obtained with the pulling speed of 1.9-2.0 mm/hr and the rotation speed of 12-13 rpm. The crystal unit cell of Bi₂(MoO₄)₃is determined to be Monoclinic in room temperature by X-ray diffraction method. Through the temperature dependence study of electrical characteristics for this crystal, the phase transition point is found to be around 475±5℃.