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허성보 ( S B Heo ),이영진 ( Y J Lee ),김선광 ( S K Kim ),유용주 ( Y Z You ),최대한 ( D H Choi ),이병훈 ( B H Lee ),김민규 ( M G Kim ),김대일 ( Daeil Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.6
SnO₂ thin films were prepared on the Si substrate by radio frequency magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation it is sup-posed that intense Ar bombardments promote rough surface and increase gas sensitivity of SnO₂ films for hydro-gen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9keV. These results suggest that the SnO₂ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.
허성보 ( Sung Bo Heo ),김소영 ( So Young Kim ),김승홍 ( Seung Hong Kim ),김선경 ( Sun Kyung Kim ),김유섬 ( Yu Sung Kim ),김대일 ( Dae Ii Kim ) 한국열처리공학회 2013 熱處理工學會誌 Vol.26 No.2
Abstrart ITO thin films deposited on glass substrate with RF magnetron sputtenng were vacuum annealed at 100, 200 and 300°C for 30 minutes and then effect of annealing temperature on the structural, electrical and optical properties of ITO films were investigated. The structural properties are strongly related to annealing temperature. The annealed films above 100°C are grown as a hexagonal wurtzite phase and the largest grain size is observed in the films annealed at 300°C. The electrical resistivity also decreases as low as 4.65 x I 0 0cm with a increase in annealing temperature and ITO film annealed at 300°C shows the lowest sheet resistance of 43.6 01 fl. The optical transmittance in a visible wavelength region also depends on the annealing temperature. The films annealed at 300°C show higher transmittance of 80.6% than those of the films prepared in this study.