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Hot Wall Epitaxy ( HWE ) 에 의한 CdGa2Se4 단결정 박막 성장과 특성
최승평(S . P . Choi),홍광준(K . J . Hong) 한국센서학회 2001 센서학회지 Vol.10 No.6
The stochiometric mix of evaporating materials for the CdGa₂Se₄ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa₂Se₄ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630 ℃ and 420 ℃, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa₂Se₄ single crystal thin films measured from Hall effect by van der Pauw method are 8.27 x 10 cm^(-3), 345 ㎠/V s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the CInSe₂ single crystal thin film, we have found that the values of spin orbit splitting Q So and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa₂Se₄ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D°,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.
SnO<sub>2</sub> 박막의 산소 빈자리에 관한 연구
정진,최승평,Jeong, Jin,Choi, Seung-Pyung 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.2
The study of Oxygen Vacancy on SnO$_2$ thin films grown by thermal chemical vapor deposition were investigated with different substrate temperature. X-ray diffraction showed that the crystallinity of the grown thin films increased with increasing substrate temperature. Two narrow peaks and two broad peaks were observed from the photoluminescence measurements at 6 K. The intensity and shape of the broad peaks were changed with increasing substrate temperature. It was concluded that the origin of the broad peak at 2.4 eV was due to oxygen vacancies and that of peak at 3.1 eV was related to structural defects. Hall effect measurements showed that the carrier density was decreased as increasing deposition time from 10 to 30 min., but increased for the deposition of 60 min.
열 CVD법으로 증착된 SnO<sub>2</sub> 박막의 미세구조와 전기적 특성
정진,최승평,신동찬,구재본,송호준,박진성,Jeong, Jin,Choi, Seong-Pyung,Shin, Dong-Chan,Koo, Jae-Bon,Song, Ho-Jun,Park, Jin-Seoung 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.5
When a SnO$_2$ thin film was deposited by thermal CVD, two different types of growth behavior that were dependent on the deposition temperature were observed. The film grown at 475$^{\circ}C$ had a wide grain size distribution and a faceted surface shape. On the other hand, the film grown at 5$25^{\circ}C$ had a relatively narrow grain size distribution and a rounded sulfate shape. The aspects of grain shape and growth behavior agree well with the theory of gram growth and a roughening transition. The charge tarrier density decreased with deposition time. According to photoluminescence measurements, the peak intensity of the spectra occurred at approximately 2.5 eV, which is related to oxygen vacancies, and decreased with increasing of deposition time. These measurement results suggest that the number of oxygen vacancies, which is related to the electrical conductivity, decrease with deposition time.
Thermal Evaporation법으로 제조한 NiCr 박막의 증착 특성
권용,박용주,최승평,정진,최광표,류현욱,박진성,Kun, Yong,Park, Yong-Ju,Choi, Seoung-Pyung,Jung, Jin,Choi, Gwang-Pyo,Ryu, Hyun-Wook,Park, Jin-Seong 한국세라믹학회 2004 한국세라믹학회지 Vol.41 No.6
NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer. NiCr 합금을 열증발원으로 사용한 thermal evaporation법으로 NiCr박막을 $Al_2$O$_3$/Si 기판 위에 증착시켰다. 이 때 동일한 량의 NiCr 합금을 1회에 모두 증착하는 방법과, l/2씩 2회 증착하는 방법으로 NiCr 박막을 각각 증착시켜, 박막의 미세구조에 따른 막의 특성변화를 고찰하였으며, 열처리 온도에 따른 NiCr 박막의 상 변화, 조성변화 및 미세구조 변화를 XRD, AES 및 FE-SEM으로 각각 분석하였다. 열처리 과정에서 박막내부에 존재하는 Cr 성분이 표면 쪽으로 확산하여 산화됨으로써 Cr산화층/Ni 층/Cr 산화층의 전형적인 다층구조를 형성함을 알 수 있었으며, 특히, $700^{\circ}C$ 이상에서는 Ni 층이 Cr산화층을 통하여 표면 쪽으로 확산됨으로써 표면에 원주형 결정립을 가지는 NiO 층을 형성하였다. 특히 Ni 층이 확산 전의 구조를 유지한 채 표면에 추가적인 NiO층이 형성되는데, 이는 형성된 Cr산화층의 확산이 상대적으로 Ni 층에 비하여 어려운데 기인한다.
흑연을 분산시킨 Al-Si 합금의 유동성에 (流動性) 관한 연구
권혁무,신세균,장충근,최승평 ( Hyuk Moo Kwon,Se Kyoon Shin,Choong Kun Chang,Seung Pyung Choi ) 한국주조공학회 1987 한국주조공학회지 Vol.7 No.1
The spiral fluidity of graphite-dispersed Al-Si alloys has been investigated as a function of contents of Si and graphite, and of particle size of graphite. The dispersion of uncoated graphite is carred out by the vortex process of preheat-treated graphite into molten metal. The fluidity of hyper-eutectic Al-Si alloys is observed to the better than that of hypo-eutectic ones. In the case of graphite-dispersed Al-Si alloys they fluidity increases in hypo-eutectic alloys and decreases in hyper-eutectic ones in comparison with that of the corresponding undispersed alloys. Fluidity decreases with an increase of amount of dispersed graphite particles and inversely proportional to the total surface area of graphite particles.
n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지의 제작과 그 특성에 관한 연구
유상하(Sang-Ha You),최승평(Seung-Pyung Choi),이상열(Sang-Youl Lee),홍광준(Kwang-Joon Hong),서상석(Sang-Suhg Suh),김혜숙(Hye-Suk Kim),전승룡(Seung-Yong Jeon),윤은희(Eun-Hee Yun),문종대(Jong-Dae Moon),신영진(Yeong-Jin Shin),정태수(Tae- 한국태양에너지학회 1993 한국태양에너지학회 논문집 Vol.13 No.1
승화방법에 의해 CdS_0.46Se_0.54 단결정을 성장하여 결정구조를 조사하고, Van der Pauw 방법으로 Hall effect를 측정하여 carrier density의 온도 의존성과 mobility의 온도 의존성을 조사하였다.<br/> 성장된 CdS_0.46Se_0.54 단결정을 치환반응 하여 n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지를 제작하였다. Special response, 전류 - 전압특성 및 전력변환 효율을 조사하여 그 결과로부터 개방전압은 0.48V, 단락 전류 밀도는 21mA/㎠,fill factor와 전력변환효율은 각각 0.75와 9.5%를 얻었다. CdS_0.46Se_0.54 single crystal was grown by a sublimation method.<br/> The crystal structure and the temperature dependence of carrier density and mobility of CdS_0.46Se_0.54 single crystal were studied.<br/> Heterojunction solar cells of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 were fabricated by the substitution reaction.<br/> The spectral response, the J - V characteristics and the conversion efficiency of the n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells were studied.<br/> The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells under 80mW/㎠ illumination were found to be 0.48V, 21mA/㎠, 0.75 and 9.5% respectively.
CBD 방법에 의한 CdS1-xSex 박막의 열처리에 따른 광전기적 특성
문종대,정태수,신현길,김택성,신영진 ( Y . J . Shin ),홍광준 ( K . J . Hong ),유상하 ( S . H . You ),서상석 ( S . S . Suh ),최승평 ( S . P . Choi ),이상열 ( S. Y . Lee ),신용진 ( Y . J . Shin ),이관교 ( K . K . Lee ),김혜숙 ( H . S . Kim ),윤 한국센서학회 1995 센서학회지 Vol.4 No.1
Polycrystalline CdS_(1-x)Se_x, thin films were grown on ceramic substrate using a chemical bath deposition method. They ere annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS_(1-x)Se_x, polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS. CdSe samples annealed in gas at a 0 it was found hexagonal structure which had the lattice constant a_0=-4.1364Å, c_0=6.7129Å in CdS and a_0=4.3021Å, c_0=7.3021Å in CdSe. respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(γ), maximum allowable power dissipation and response time on these samples.