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터널링 자기저항 소자의 접합면 정전용량에 따른 전기적 응답특성
박승영(S. Y. Park),최연봉(Y. B. Choi),조순철(S. C. Jo) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.2
In this research, the effects of capacitance to the access time were studied at the junction area of tunneling magnetoresistance when these were used as memory devices. These results were obtained by applying electric signal input and magnetic field was not used. We applied bipolar square waves of 1㎒ to the MTJ samples to obtain the results and time constant (τ) calculated by observing wave responses utilizing an oscilloscope. And time constant was compared with junction area. Each part of MTJ sample, such as electrical pad, lead and contact area, was modeled as an electrical equivalent circuit based on experimental results. For the 200 ㎛×200 ㎛ cell, junction capacitance was 90 pF. Also, measurement and simulation results were compared, which showed those similarity.
전공식 콘트롤 밸브 Positioner 용 Magnet Unit의 해석
김성재(S. J. Kim),김지원(J. W. Kim),조순철(S. T. Chung),정선태(S. Jo),유형근(H. -K. Yoo),전찬구(C. -G. Jeon),고택범(T. -B. Koh) 한국자기학회 1997 韓國磁氣學會誌 Vol.7 No.6
We analyzed an important part of control valve, magnet unit, which is used to control the fluid. Magnetic circuit which is composed of magnet and yoke is analyzed using finite element method. Then, flux density and coil force were calculated and compared with those of measured. According to the simulation results, the gap field, force constant, and permeance coefficient were 3~5 kG, 27.5 N/A, 22.1, respectively, which corresponded resonably well with the measured values. We also obtained reluctance factor of 1.1 and fringing factor of 1.4 by simulation.
박승영(S. Y. Park),최연봉(Y. B. Choi),조순철(S. C. Jo) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.5
Electrostatic discharge characteristics were studied by connecting human body model (HBM) with tunneling magnetoresistance (TMR) device in this research. TMR samples were converted into electrical equivalent circuit with HBM and it was simulated utilizing PSPICE. Discharge characteristics were observed by changing the component values of the junction model in this equivalent circuit. The results show that resistance and capacitance of the TMR junction were determinative components that dominate the sensitivity of the electrostatic discharge(ESD). Reducing the resistance of the junction area and lead line is more profitable to increase the recording density rather than increasing the capacitance to improve the endurance for ESD events. Endurance at DC state was performed by checking breakdown and failure voltages for applied DC voltage. HBM voltage that a TMR device could endure was estimated when the DC failure voltage was regarded as the HBM failure voltage.