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DC 마그네트론 스퍼터링법으로 제조된 Tio<sub>2</sub> 박막의 산소분압비에 따른 광분해 특성에 관한 연구
정운조,박중윤,박계춘,Jeong, W.J.,Park, J.Y.,Park, G.C. 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
This paper describes the photocatalytic degradation properties by oxygen partial pressure for TiO$_2$ thin films fabricated by dc magnetron reactive sputtering. And the structural, chemical, optical and photocatalytic properties were investigated at various analysis system. When TiO$_2$ thin film was made at deposition time of 120 min and Ar:O$_2$ ratio of 60:40, the best properties were obtained. That results were as follows: thickness; 360∼370 nm, gram size; 40 nm, optical energy band gap; 3.4 eV and Benzene conversion in the photocatalytic degradation; 11 %.
R . F . magnetron sputtering 법으로 제작한 ITO 박막의 특성
정운조,박계춘,유용택 ( W . J . Jeong,G . C . Park,Y . T . Yoo ) 한국센서학회 1995 센서학회지 Vol.4 No.2
Indium Tin Oxide (ITO) thin films have been fabricated by the rf magnetron sputtering technique with a target of a mixture In₂O₃ (90mol%) and SnO₂ (10mol%). We prepared ITO thin films with substrate temperature 100, 300, 400, 500℃ and post-annealing temperature 300, 400, 500℃. And w e analyzed X-ray diffraction patterns, electrical properties, transmission spectra and SEM photographs. As a result, the crystallinity, electrical conductivity and transmittance of ITO thin films were improved with increasing substrate temperature. I3ut, as increasing post-annealing temperature in air. conductivity of the film was decreased. When the ITO thin film was fabricated with substrate temperature of 500℃ and thickness of 3,000 Å, its resistivity and transmittance were about 2×10^(-4)Ωcm and 55% or more, respectively.