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CVI 를 이용한 이염화이메틸규소로부터의 탄화규소 증착에 의한 화이버강화 세라믹 복합재료 제조의 연구
김정우,유재훈,조민수,주재백,정귀영 ( Jung Woo Kim,Jae Hoon Yoo,Min Soo Cho,Jae Back Ju,Gui Yung Chung ) 한국화학공학회 1996 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.34 No.4
C/SiC composite materials were prepared by depositing silicon carbide from dichlorodimethylsilane(DDS) and hydrogen in the woven fabrics of carbon fibers through chemical vapor infiltration(CVI). Most of DDS decomposed thermally at the temperature above 950℃. The deposition rate increased with the pressure, i.e., the concentration af dichlorodimethylsilane. It also increased wit4 the deposition temperature, however, it decreased after the temperature reached 1000℃ due to side reactions. Silicon carbide deposited uniformly around fibers in the sample and was confirmed as β-type. The first-order deposition rate constant at 950℃ was 30㎝/min and the Arrhenius constant and the activation energy were 1.58×10^(12) ㎝/min and 60 ㎉/㏖, respectively.