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Layer by layer oxidation 방법에 의한 실리콘 산화막 제작
田正牧,秋美京,張震,李景夏 慶熙大學校 레이저 工學硏究所 1992 레이저공학 Vol.3 No.-
We have studied the fabrication of silicon dioxide films using layer by layer oxidation method by remote-plasma chemical vapor deposition(RP-CVD). We made oxide film with breakdown field strength of 7.5MV/cm and leakage current about 8x10?? A/cm at the substrate temperature of 400℃.
유순성,전정목,이경하,문병연,장진,Yoo, Soon-Sung,Jun, Jung-Mok,Lee, Kyung-Ha,Moon, Byeong-Yeon,Jang, Jin 대한전자공학회 1994 전자공학회논문지-A Vol.31 No.5
We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.
RPCVD 방법에 의한 실리콘 산화막과 수소화된 비정실 실리콘 박막트랜지스터 제작
李景夏,田正牧,李泰陳,張震 慶熙大學校 레이저 工學硏究所 1991 레이저공학 Vol.2 No.-
We have studied the fabrication of hydrogenated amorphous silicon (a-Si : H) thin film transistor using silicon dioxide film by remote-plasma chemical vapor deposition (RP-CVD). We made oxide film with breakdown fieldstrength of 8 MV/cm and leakage current density less than 10?? A/㎠ at 380℃. Using this oxide, we have made a-Si : H TFT with field effect mobility of ~ 1.0㎠/Vs, threshold voltage of ∼ 6 V, and on/off current ratio of ∼10??.
고조파 발생을 위한 5[KVA]급 AC Power Source 개발
최문규(M. G. Choi),유재근(J. G. Yoo),이상익(S. I. Lee),전정채(J. C. Jeong),최규하(G. H. Choe),목형수(H. S. Mok) 전력전자학회 2005 전력전자학술대회 논문집 Vol.- No.-
Recently the harmonic generation has declined electricity quality and has bad influence on the electrical installation including OA(Office Automation), FA(Factory Automation), IT(Information Telecommuni -cation) devices and so on. The study of harmonics be greatly interested in diagnosis accident with harmonics was not merely guesswork but clarify the cause by experimental data at these days. Therefore, it is necessary development of AC power source for correct experiment with reliable data. In this paper, we realized the AC power source that can produce and compose harmonics for analysis of accident with harmonics.