http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
4분할 광 검출기 상의 광점 크기가 변위 측정감도에 미치는 영향
이은중(Eun Joong Lee),이진우(Jin Woo Lee),고태준(Taejoon Kouh) 한국자기학회 2008 韓國磁氣學會誌 Vol.18 No.2
In this paper, we have measured the effect of the optical spot size, incident upon the quadrant photodetector, on the optical displacement sensitivity of the optical beam deflection technique. We have built an optical displacement detection system based on the optical beam deflection method using 3 ㎽ He-Ne laser and measured the displacement sensitivity with changing the optical spot size on the quadrant photodetector. We have also calculated the changes in the optical displacement sensitivity as a function of the incident laser spot size by modeling a circular optical spot with constant laser intensity. Our experimental and theoretical studies show that the optical displacement sensitivity increases with the decrease in the optical spot size. This suggests that in the design of the optical motion detection systems with sub-nanometer sensitivity, the displacement sensitivity can be optimized by reducing the size of the incident optical spot on the detector.
초기 산화피막 제거와 양극산화 시간에 따른 다공성 알루미나 막의 성장
김대환(Dae Hwan Kim),류상희(Sang Hee Lue),이효진(Hyojin Lee),박영옥(Youngok Park),이은중(Eun Joong Lee),고태준(Taejoon Kouh) 한국자기학회 2010 韓國磁氣學會誌 Vol.20 No.5
We have investigated the effect of the removal of an initial oxide layer and the anodization time on the growth of the porous alumina layer. The porous alumina layer was fabricated by two-step anodization process with phosphoric acid. We have observed the changes in the uniformity of the pore structure by varying the removing time of the initial oxide layer after the first anodization with phosphoric acid and chromic acid, and noted that its uniformity improves with the removing time. We have also determined the thickness of the alumina layer after the final anodization process and found that the thickness increases linearly with the anodization time. Under 150 V of anodization voltage with phosphoric acid, the growth rate of the porous alumina layer is determined to be 22.5 ㎚/min.