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RISS 인기검색어
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- 저자 : 이우일 ( Jung Ok Woo (검색결과 4 건)
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컬러센서를 위한 $TiO_{2}$/Se : Te 이종접합의 스펙트럼 응답
우정옥,박욱동,김기완,이우일,Woo, Jung-Ok,Park, Wug-Dong,Kim, Ki-Wan,Lee, Wu-Il 한국센서학회 1993 센서학회지 Vol.2 No.1
컬러센서를 위한 $TiO_{2}$/Se : Te 이종접합을 고주파 반응성 스퍼터링법과 진공증착법을 이용하여 제작하였다. 제조된 $TiO_{2}$ 막형성의 최적조건은 $1000{\AA}$의 $TiO_{2}$ 두께에서 고주파전력 120 W, 기판온도 $100^{\circ}C$, 산소농도 50% 및 분위기압 50 mTorr였다. 이 때 광투과율은 파장 550 nm에서 85%, 저항률은 $2{\times}10^9{\Omega}{\cdot}cm$, 굴절률은 2.3이었다. 제조된 $TiO_{2}$막은 직접천이형 에너지 밴드구조를 가지며 광학적 밴드갭은 3.58 eV였다. 제조된$TiO_{2}$막을 $400^{\circ}C$에서 30분간 열처리함으로써 광투과율이 파장 $300{\sim}580$ nm범위에서 $0{\sim}25%$까지 개선되었다. 또한 화학양론적 조성비를 조사하기 위하여 AES 분석을 한 결과 Ti 및 0의 조성비는 1 : 1.7로 나타났다. 한편 Se : Te 막형성의 최적조건은 $190^{\circ}C$에서 1분간 열처리했을 때였다. 이러한 조건으로 제조된 Se : Te막의 광학적 밴드갭은 1.7 eV였으며 육방정계구조의 (100) 방향 및 (110) 방향으로 Se : Te 막이 결정화됨을 알 수 있었다. 1000 lux의 조도에서 Se : Te막의 광전변환률은 0.75였다. 또한 Se에 Te를 첨가함으로써 장파장영역의 분광감도가 향상되었다. $TiO_{2}$/Se : Te 이종접합의 분광감도는 가시광 전영역에서 비교적 넓은 분광감도를 나타내었으며, 특히 청색영역에서 a-Si박막보다 우수한 분광감도를 나타내었다. $TiO_{2}$/Se : Te heterojunction for color sensor has been fabricated by RF reactive sputtering and thermal evaporation methods onto glass substrate. The optimum deposition condition of $TiO_{2}$ films was such that RF power was 120 W, substrate temperature was $100^{\circ}C$, oxygen concentration was 50%, working pressure was 50 mTorr for the $TiO_{2}$ film thickness of $1000{\AA}$. In this case, the optical transmittance of $TiO_{2}$ film at 550 nm-wavelength was 85%, resistivity was $2{\times}10^9{\Omega}{\cdot}cm$, refractive index was 2.3, and optical bandgap was 3.58 eV. The composition ratio of 0 to Ti by AES analysis was 1.7. When $TiO_{2}$ films were annealed at $400^{\circ}C$ for 30 min. in $O_{2}$ ambient, the optical transmittance of $TiO_{2}$ films at the wavelength range of $300{\sim}580$ nm was improved from 0 to 25%. When Se : Te films were annealed at $190^{\circ}C$ for 1 min., photosensitivity under illumination of 1000 lux was 0.75. The optical bandgap of Se : Te films was 1.7 eV. The structures of Se : Te films were the hexagonal with (100) and (110) orientation. The spectral response of a-Se was improved by the addition of Te, especially in the long wavelength region. The $TiO_{2}$/Se : Te heterojunction showed wide spectral response, and more improved one than that of a-Si film in the blue light region.
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컬러센서를 위한 TiO2/Se : Te 이종접합의 스펙트럼 응답
우정욱,박욱동,김기완,이우일 ( Jung Ok Woo,Wug Dong Park,Ki Wan Kim,Wu Il Lee ) 한국센서학회 1993 센서학회지 Vol.2 No.1
TiOz/Se : Te heterojunction for color sensor has been fabricated by RF reactive sputtering and thermal evaporation methods onto glass substrate. The optimum deposition condition of TiO₂ films was such that RF power was 120 W, substrate temperature was 100℃, oxygen concentration was 50%, working pressure was 50 mTorr for the TiO₂ film thickness of 1000Å. In this case, the optical transmittance of TiO₂ film at 550 nm-wavelength was 85 %, resistivity was 2 X 10^9 Ω·cm, refractive index was 2. 3, and optical bandgap was 3. 58 eV. The composition ratio of 0 to Ti by AES analysis was 1.7. When TiO₂ films were annealed at 400℃ for 30 min. in O₂ ambient, the optical transmittance of TiO₂ films at the wavelength range of 300∼580 nm was improved from 0 to 25 %. When Se : Te films were annealed at 190℃ for 1 min, photosensitivity under illumination of 1000 lux was 0.75. The optical bandgap of Se : Te films was 1.7 eV. The structures of Se : Te films were the hexagonal with (100) and (110) orientation. The spectral response of a-Se was improved by the addition of Te, especially in the long wavelength region. The TiO₂/Se : Te heterojunction showed wide spectral response. and more improved one than that of a-Si film in the blue light region.
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이우일,우정옥 경북대학교 전자기술연구소 1993 電子技術硏究誌 Vol.14 No.1
TiO₂ films for window material of color sensor have been fabricated by RF reactive sputtering method onto glass substrate. TiO₂ films were investigated under the different deposition conditions. The optimum depositions of TiO₂ films for window material of color sensor were such that RF power was 120 W, substrate temperature was 100℃, oxygen concentration was 50%, working pressure was 50 mTorr, and thickness was 1000 Å. In this case, the optical transmittance of TiO₂ films at 550 ㎚ wavelength was 85%, resistivity was 2×10^9 Ω·㎝, refractive index was 2.3, and optical bandgap was 3.58 eV. The imposition ratio of O to Ti by AES analysis was 1.7. When TiO₂ films were annealed at 400℃ for 30 min. in O₂ ambient, the optical transmittance characteristics of TiO₂ films at 300㎚∼580㎚ wavelength were improved from 0 % bo 25 %.
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