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비정질 인듐갈룸ᅳ아연-산화물 박막트랜지스터 기반의 AMOLED 화소 회로
이재표(Jae-Pyo Lee),유경민(Kyeong-Min Yu),장진녕(JinNyoung Jang),홍문표(MunPyo Hong),배병성(Byung Seong Bae) 호서대학교 공업기술연구소 2013 공업기술연구 논문집 Vol.32 No.2
본 논문은 비정질 인둠ᅳ갈f ᅳ아연-산화물 박막트랜지스터 (a-IGZO TFT)를 이용하여 능동형 유기발광다이오드 (AMOLED)용 문턱전압(Vth )을 보상하는 화소 회로를 제안하였다. 산화물 TFT는 n-채널 TFT로써, 우리는 n-채널 TFT 특성으로 회로를 최적화하였다. 제안된 화소 회로는 회로 시뮬레이션 뿐만 아니라 회로 분석을 이용하여 확인되었다. 제안된 화소 회로는 AMOLED에서 구동 TFT의 문턱전압 변화를 보상할 수 있다. 제안된 화소 회로를 이용함으로써, 문턱전압 보상은 달성되었다. rhis paper proposes a tnresnold voltage compensation pixel circuit for active-matrix organic light-emitting diode (AM OLED) using amorphous indium-gaUiimi-zinc-oxide thin-film transistors (a-IGZO TFTs), Oxide TFT is an n-channel TFT; therefore, we optimized the circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified using circuit analysis as well as circuit simulations. The proposed circuit could compensate for the threshold voltage variations o f drive TFT in AM OLED. Using the proposed pixel circuit, threshold voltage compensation was achieved.
InGaZnO 용액의 농도가 Drop-casting으로 제작된 산화물 박막 트랜지스터의 전기적 특성에 미치는 영향
노은경 ( Eun-kyung Noh ),유경민 ( Kyeong Min Yu ),김민회 ( Min-hoi Kim ) 한국센서학회 2020 센서학회지 Vol.29 No.5
Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.