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높은 수율의 임계값 스위칭 특성을 위한 CMOS 호환 전극을 갖는 NbO<SUB>x</SUB> 층에서 산화물 장벽의 역할
최현식(Hyeonsik Choi),김윤서(Yunsur Kim),박형진(Hyoungjin Park),정지애(Jiae Jeong),우지용(Jiyong Woo) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
This study shows how the threshold switching (TS) characteristics of a NbOx layer with noninert W electrodes can be improved by introducing an oxide barrier. The ~10-nm-thick NbOx layer exhibits TS, which is known to originate from NbO₂, after electroforming. However, through X-ray photoelectron spectroscopy, a Nb₂O<SUB>5</SUB> layer, which is known to cause resistive memory switching, is formed mainly at the top interface as well. This results in a worsening TS yield. Therefore, thin oxides were introduced to improve the TS behavior and systematically investigate the role of the oxide barrier by considering their location and material properties. The barrier inserted at the bottom interface makes the formation of NbO₂ difficult, preventing TS. When the barrier was introduced at the top interface, the unwanted Nb₂O<SUB>5</SUB> created through reaction with the W electrode can be mitigated, promoting the occurrence of TS. Note that when an AL₂O₃ (or HfO₂) barrier is used, which prefers to scavenge (or provide) oxygen from (or to) the NbOx, a dielectric (or weak TS) behavior is shown. As a result, excellent cell-to-cell uniformity of the TS is achieved in the ZrO₂/NbOx stack, which not only prevents the formation of Nb₂O<SUB>5</SUB> but also stabilizes the NbO₂ in the NbOx layer. Through examining the temperature dependence of the TS obtained from the W/NbOx/W and W/ZrO₂/NbOx/W stacks, it was found that the suppression of the Nb₂O<SUB>5</SUB> at the top interface is indirectly shown as a strengthened Schottky barrier from an electrical measurement perspective.