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화합물 반도체 CIGS 박막태양전지 제작 및 특성 평가
김제하(J. Kim),조대형(D. -H. Cho),변태준(T. -J. Byun),정용덕(Y. -D. Chung),박래만(N. -M. Park),김은아(E. -A. Kim),이규석(K. -S. Lee),오수영(S. Y. Oh) 대한전자공학회 2010 대한전자공학회 학술대회 Vol.2010 No.6
We developed processes of co-evaporation and precursor-reaction for high quality CuIn,GaSe2(CIGS) and characterized their structural properties using various techniques such as SEM, XRD, XRF, and Auger depth profiling. In addition, we used a basic fabrication process for CIGS photovoltaic devices and evaluated their J-V characteristics. For the cells of 0.47 cm<SUP>2</SUP>, the conversion efficiency of 15.54% and 9.7% was obtained for co-evaporated and precursor-reaction prepared CIGS cells, respectively.