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Spherical Recess Channel을 가진 MFMIS 구조의 하프니아 기반 강유전체 전계효과 트랜지스터 소자 특성 개선
엄태형(Taehyong Eom),김태호(Taeho Kim),김기욱(Giuk Kim),이상호(Sangho Lee),전상훈(Sanghun Jeon) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
Owing to superior complementary metal oxide semiconductor (CMOS) compatibility and high scalability, substantial research effort of HfO₂- based Ferroelectric have been put into the development of hafnia-based nonvolatile memory(NVM) devices. With regard to this, FeFET with various structure has been proposed. However, Metal / Ferroelectrics / Silicon (MFS), Metal / Ferroelectrics / Insulator / Silicon (MFIS) structure FeFET have limited memory window, reliability and switching speed property. The value of the capacitance of gate insulator is relatively lower than that of ferroelectrics, which induces most of the biased voltage drops in the gate dielectric layer. Here in, We exploit the Metal / Ferroelectric Layer / Metal / Insulator / Silicon (MFMIS) structure FeFET, in order to adjust capacitance ratio between gate insulator and ferroelectrics(CDE : CFE). We found the large memory window, high switching speed and high endurance in the MFMIS FeFET at a certain capacitance ratio (CDE : CFE). We believe the MFMIS FeFET can be a promising NVM device.