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압전박막을 이용한 감압전장효과 트랜지스터 ( PSFET ) 의 동작특성
남기홍 ( Ki Hong Nam ),손병기 ( Byung Ki Sohn ),조병욱 ( Byung Woog Cho ),양규석 ( Gyu Suk Yang ),군대혁 ( Dae hyuk Kwon ) 한국센서학회 1995 센서학회지 Vol.4 No.2
A new FET type semiconductor pressure sensor (FSFET : pressure sensitive field effect transistors was fabricated and its operational characteristics were investigated. A ZnO thin film as a piezoelectric layer, 5000Å thick, was deposited on a gate oxide of FET by RF magnetron sputtering. he deposition conditions to obtain a axis poling structure were substrate temperature of power of 140watt, and working pressure of 5mtorr in Ar ambience. The fabricated PSFET den-ice showed good linearity and stability in the applied pressure range(1x10^5 Pa∼4x10^5 Pa)
양규석,권대혁,남기홍,손병기 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
A new FET type pressure sensor has been investigated to overcome the problems of the conventional silicon piezoresistive and capacitive pressure sensor. The PSFET( pressure sensitive field effect transistor) is a new FET type pressure sensor which the operation theory is combined with the field effect of MOSFET and the piezoelectric effect of piezoelectric thin films. This sensor can overcome the fabrication problems of conventional silicon pressure sensors and realize productivity, standardization, miniaturization, integration because the whole fab. process is compatible to the planar technology. A ZnO thin film as a piezoelectric material, 5000Å thick, was deposited on a FET gate by RF magnetron sputtering and the optimum deposition condition was 300℃ substrate temperature, 5mtorr working pressure, Ar ambient and 140watt RF power, respectively. And the device was annealed at 400℃, O_(2) ambient for 1 hour to obtain a better C-axis poling structure. The fabricated PSFET device showed piezoelectric voltage(40mV/kgf/cd) and sensitivity (21μA/kgf/cm^(2)) according to an applied pressure(1kgf/cm^(2)~4kgf/cm^(2)).