http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
CoO를 절연층으로 이용한 스핀 의존성 터널링 접합에서의 자기저항 특성
정창욱(Chang-Wook Jeong),조용진(Yong-Jin Cho),안동환(Dong-Whan Ahn),정원철(Won-Cheol Jeong),조권구(Kwon-Koo Cho),주승기(Seung-Ki Joo) 한국자기학회 2000 韓國磁氣學會誌 Vol.10 No.4
MR characteristics in magnetic tunnel junction using CoO as the oxide barrier were investigated. Spin-dependent tunnel junctions were fabricated on 4° tilt-cut (111)Si substrates in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni_(80)Fe_(20)(300 Å) and Co(300 Å), respectively. The oxide barriers(CoO) were formed by the thermal oxidation at room temperature in an O₂ atmosphere and the plasma oxidation. The increase of coercive field due to antiferromagnetic-ferromagnetic coupling has been observed in O₂ plasma-oxidized CoO based junctions at room temperature. At a sensing current of 1 ㎃, MR ratios of O₂ plasma-oxidized CoO based junction and thermal-oxidized CoO based junction at room temperature were 1 % and 5 %, respectively. Larger MR ratios are observed in magnetic tunnel juctions with thermal oxidized CoO when sensing current more than applied 1.5 ㎃. At a sensing current of 1.5 ㎃, we have observed MR value of 28 % and specific resistance (RA=R×A) value of 10.9 ㏀×㎛². When specific resistance values reached 2.28 ㏀×㎛², we have observed that MR ratios become as high as 120 %.