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어도 개보수에 따른 어류 자원량 및 경제적 가치 평가: 삼척오십천 사례
문운기,배대열,김도현,신현범,서정빈,임경훈,이의행,유재상,안광국,김재구,Moon, Woon-Ki,Bae, Dae-Yeul,Kim, Do-Hyun,Shin, Hyun-Beom,Suh, Jung Bin,Lim, Kyeong Hun,Lee, Eui-Haeng,Yoo, Jae-Sang,An, Kwang-Guk,Kim, Jai-Ku 한국환경생물학회 2020 환경생물 : 환경생물학회지 Vol.38 No.1
SOW-0010의 어도 개보수 전·후 자원량을 분석한 결과 개보수 이후 평균자원량은 약 4.6배 증가한 것으로 나타났다. 경제적 가치는 어도 개보수 전 2014년 약 5.3백만원에서 어도 개보수 후 2015년 약 23.9백만원, 2016년 약 3.0백만원, 2017년 약 10.4백만원, 2018년 약 22.4백만원, 2019년 약 27.1백만원으로 매년 증감패턴이 다르게 나타났다. 2016년을 제외하고 전체적으로 개보수 이후 경제적 가치는 증가한 것으로 나타났다. 이는 다양한 회유성어종의 유입과 담수어류의 국지적 이동이 증가했기 때문으로 판단한다. 자원량 변화에 따른 경제적 가치변동을 지수함수를 적용하여 분석한 결과 모델계수는 0.582였으며, 이에 따른 최대 경제적 가치는 30.4백만원인 것으로 추정되었다. 군집 내 경제성어종의 비율과 점유율이 높을수록 계수값이 증가하고 이에 따라 경제적 가치가 높아질 것으로 예상한다. The changes in fish stock and biomass before and after fishway renovation located in a Korean estuary were studied and fluctuations in the economic value of the fish resources were estimated. The target fishway located in the east coast area in Korea was renovated in 2014 from the small fish ladder to the ice-harbor fishway. Monitoring was continued for five consecutive years after the renovation(2015 to 2019). Since the renovation of the fish passage, the economic values increased with increases in the fishery resources, except for in 2016 when the drought impact was severe. The yearly average incremental increase in the five years after the renovation was about 227%. The increase in economic value is believed to be due to the increased population of migratory fish as a result of habitat expansion. The exponential rise model showed an increase in economic value with increasing fishery resources (R<sup>2</sup>=0.896). The model coefficient contributing to economic analysis was 0.582 and the maximum economic value after the renovation was estimated at about 30.4 million. The economic value would be a useful index for quantitative comparison in terms of ecosystem services before and after renovation.
방열 특성에 따른 집광형 태양전지의 광전변환효율 변화에 관한 실험적 연구
김강호(Kangho Kim),정상현(Sang Hyun Jung),김영조(Youngjo Kim),김창주(Chang Zoo Kim),전동환(Dong Hwan Jun),신현범(Hyun-Beom Shin),이재진(Jaejin Lee),강호관(Ho Kwan Kang) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.4
Under concentrated illuminations, the solar cells show higher efficiencies mainly due to an increase of the open circuit voltage. In this study, InGaP/InGaAs/Ge triple-junction solar cells have been grown by a low pressure metalorganic chemical vapor deposition. Photovoltaic characteristics of the fabricated solar cells are investigated with a class A solar simulator under concentrated illuminations from 1 to 100 suns. Ideally, the open circuit voltage should increase with the current level when maintained at the same temperature. However, the fabricated solar cells show degraded open circuit voltages under high concentrations around 100 suns. This means that the heat sink design is not optimized to keep the cell temperature at 25°C. To demonstrate the thermal degradation, changes of the device performance are investigated with different bonding conditions and heat sink materials.
InGaP/GaAs 이중접합 기반의 고효율 플렉시블 태양전지 제조기술 연구
문승필(Seungpil Moon),김영조(Youngjo Kim),김강호(Kangho Kim),김창주(Chang Zoo Kim),정상현(Sang Hyun Jung),신현범(Hyun-Beom Shin),박경호(Kyung Ho Park),박원규(Won-Kyu Park),안연식(Yeon-Shik Ahn),강호관(Ho Kwan Kang) 한국태양광발전학회 2016 Current Photovoltaic Research Vol.4 No.3
III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an AlxGa1-xAs (x≥0.8) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.