http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
열처리 및 기계적응력이 Epoxy resin의 절연강도에 미치는 영향
신중홍,박정후,김영식 한국마린엔지니어링학회 1984 한국마린엔지니어링학회지 Vol.8 No.2
The effect of heat treatment and mechanical stress on the dielectic strength of epoxy resin film is studied. The film with 30-210 .mu.m thickness are casted at room temperature for 8 hours and post cured at the range of temperature 60-180 .deg. C, and the heat setting time are two kind, ie, 2 and 10 hours. The samples are made with Stycast 1266 that the primary compound is diglycidyl ether of bisphenol A, and the hardner is denaturated polyamines. Under no mechanical stresses, the maximum dielectric strength of the sample is obtained for the sample heat treated for 2 hours at 150 .deg. C. However, the best dielectric strength characteristics under compressive stress is obtained for the sample heat treated at 90 .deg. C and 120 .deg. C. The dielectric strength of the sample are also affected significantly by the cooling velocity of the sample after post heat setting at given temperature.
반응성 RF 평판형 마그네트론 스퍼트링에 의한 TiN박막의 형성에 관한 연구
愼重弘 東義大學校 産業技術開發硏究所 1997 産業技術硏究誌 Vol.11 No.-
This paper deals with the preparation of TiN thin film and its adhesive force and resistivity by R.F. planar reactive magnetron sputtering process as a parameter of substrate bias voltage. The bias voltage showing the best adhesive force(42N) on stainless steel was about -100V. However, the resistivity of Tin thin film shows the lowest value (∼70μΩ·cm) at the bias voltage of -100V. The grain of Tin thin film was growth in the direction of (111) and (200) surface under this -100V bias voltage.
전자빔 증착법으로 제작한 Cu 박막의 부착력과 저항율 특성
신중홍,유충희,백상봉,Shin, Joong-Hong,Yu, Chung-Hui,Paik, Sang-Bong 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.1
In this thesis, We Fabricated Cu thin films of 1000 $\AA$, 3000 $\AA$, and 6000 $\AA$ thickness on the single crystal sapphire, polycrystal alumina, and amorphous slide glass substrates deposited by electron beam evaporation(EBE) method. We investigated properties of resistivity and adhesion of these Cu thin films under various conditions, substrate temperature(room temperature, 10$0^{\circ}C$, 20$0^{\circ}C$ under vacuum) and annealing temperatures(400 $^{\circ}C$, 600 $^{\circ}C$ for 30 min after the deposition). We found that these adhesion was increased in order of slide glass, sapphire, and alumina. The adhesion of the Cu thin films on alumina was high value about 4 times, compared with that of the Cu thin films on slide glass. We found that these resistivities were decreased with increasing substrate temperature and thin film thickness. The resistivity(2.05 $\mu$Ω\ulcornercm) of the Cu thin films with 6000 $\AA$ thickness at 200 $^{\circ}C$ on the slide glass was low value, compared with that of aluminum(2.66 $\mu$Ω\ulcornercm).
AC PDP의 유전체 두께와 격벽 높이에 따른 Addressing Time
신중홍,박정후 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.12
The addressing time should be reduced by modifying cell structure and/or driving method in order to replace the dual scan system by single scan and increase the luminance in large ac plasma display panel(PDP). In this paper, the effects of the addressing time was decreased with decreasing thickness of dielectric layer on the front glass and thickness of white dielectric layer on the rear glass. the decreasing rate were 160ns/10$\mu\textrm{m}$ and 270ns/10$\mu\textrm{m}$, respectively Also in case of decreasing the height of barrier rib, addressing time was decreased at the rate of Sons/10$\mu\textrm{m}$.
愼重弘(Joong-Hong Shin),李敦揆(Don-Kyu Lee),윤초롬(Cho-Rom Yoon),許禎恩(Jeong-Eun Heo),朴正后(Chung-Hoo Park) 대한전기학회 2008 전기학회논문지 Vol.57 No.2
In order to improve cost and efficacy of AC PDP with metal discharge electrodes, a new Ⅱ-type metal electrodes are suggested. The suggested asymmetrical Ⅱ-type metal electrode is improved in the luminance, power and efficacy than the conventional metal electrode by 7.5%, 6%, and 14%, respectively. The efficacy of the suggested asymmetrical Ⅱ-type metal electrode is almost the same with the conventional ITO electrode. Moreover, the address time of the Ⅱ-type metal electrode is shorter than the conventional ITO electrode.