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PEALD를 이용한 HfO<sub>2</sub> 유전박막의 Al 도핑 효과 연구
오민정 ( Min Jung Oh ),송지나 ( Ji Na Song ),강슬기 ( Seul Gi Kang ),김보중 ( Bo Joong Kim ),윤창번 ( Chang-bun Yoon ) 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.2
Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO<sub>2</sub> used as a gate oxide have occurred. In order to overcome the limitation of SiO<sub>2</sub>, many studies have been conducted on HfO<sub>2</sub> that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO<sub>2</sub>, and has an appropriate band gap. In this study, HfO<sub>2</sub>, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO<sub>2</sub> thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.
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