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인접셀을 이용한 축소된 삼차원 낸드플래시 구조에서의 프로그램 성능개선 동작방법
심재민(Jae-Min Sim),송윤흡(Yun-Heub Song) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
In this paper, we propose an improvement program method using adjacent cell bias conditions. In 3D NAND flash memory, verify and program operation are significantly degraded due to the scaling effect, and we confirm that the influence of adjacent cells are significantly. Therefore, we improved the Vth Window and Program speed by modifying the adjacent cell bias condition.
삼차원 플래시 메모리에서 프로그래밍된 인접셀 위치에 따른 셀간 간섭 분석
심재민(Jae-Min Sim),송윤흡(Song-Yun Heub) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
In this paper, we investigated cell-to-cell interference in scaled-down 3D NAND flash memory, we confirmed that as the space length decrease, the insufficient electric field at the channel surface induced conduction band distortion effect. Furthermore, insufficient electric field at the WLn+1 channel region degrades surface mobility, leading to cell-to-cell interference more than WLn-1 channel region, which is diffusion current induce junction region. As a result, we considerate this cell-to-cell interference in scaled-down 3D NAND flash memory
Improved Sensing Scheme to Enhance Read Performance for 3D PCM-OTS Cross-Point Memory
Seong-Beom Kim(김성범),Yun-Heub Song(송윤흡) 대한전자공학회 2020 대한전자공학회 학술대회 Vol.2020 No.8
Phase Change Random Access Memory (PCM) with Ovonic Threshold Switch (OTS) has emerged as a candidate of Storage Class Memory (SCM). However, snapback phenomenon exists in the threshold switching of OTS selector that induces a rapid current called snapback current. This current degrades the read performance of PCM-OTS cell. In this study, an improved pre-charge sensing scheme with additional discharging path is introduced as a solution to reduce the effect of snapback current. The sensing scheme is verified using HSPICE. Several discharge paths are described. Adding discharge path reduces the energy consumption (17%, 12%), sensing time (8%,13%), and peak power level (13%,5%) as compared to the original discharging path.
CAAC-IGZO 채널을 적용한 3D NAND Flash cell 공정 조건 연구
박상우(Sang-Woo Park),오영택(Young-Taek-Oh),정재경(Jae-Kyeong Jeong),송윤흡(Yun-heub Song) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
In this work, we proposed an Indium-Gallium-Zinc-Oxide (IGZO) as a 3D NAND channel material that can overcome the limitation of conventional 3D NAND poly silicon channel. Especially C-axis aligned crystal IGZO (CAAC-IGZO) has a wide bandgap, temperature tolerance, and crystal structure, then there is no grain boundary issue with small off-state leakage, change with temperature. Our new material and manufacturing method based on CAAC-IGZO channel will help to overcome the limitation of the current 3D NAND Flash memory and achieve high integration in accordance with the market storage demands.