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정규상,석전성 (石田誠),중촌철랑 (中村哲郞) ( Gwiy Sang Chung,Makoto Ishida,Tetsuro Nakamura ) 한국센서학회 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/SiO₂/Si and Si/Al₂O₃/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to 300 . In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the 50I pressure sensors was controlled to within a standard deviation of ±2.3 % over 200 devices. Moreover, the pressure sensors fabricated on the double SOI (Si/Al₂O₃/Si/SiO₂/Si) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
정귀상,석전성,중촌철랑,Chung, Gwiy-Sang,Ishida, Makoto,Nakamura, Tetsuro The Korean Sensors Society 1994 센서학회지 Vol.3 No.1
This paper describes the characteristics of a piezoresistive pressure sensor fabricated on a SOI (Si-on-insulator) structure, in which the SOI structures of Si/$SiO_{2}$/Si and Si/$Al_{2}O_{3}$/Si were formed by SDB (Si-wafer direct bonding) technology and hetero-epitaxial growth, respectively. The SOI pressure sensors using the insulator of a SOI structure as the dielectrical isolation layer of piezoresistors, were operated at higher temperatures up to $300^{\circ}C$. In the case of pressure sensors using the insulator of a SOI structure as an etch-stop layer during the formation of thin Si diaphragms, the pressure sensitivity variation of the SOI pressure sensors was controlled to within a standard deviation of ${\pm}2.3%$ over 200 devices. Moreover, the pressure sensors fabricated on the double SOI ($Si/Al_{2}O_{3}/Si/SiO_{2}/Si$) structures formed by combining SDB technology with epitaxial growth also showed very excellent characteristics with high-temperature operation and high-resolution.
보호용 실리콘 산화막을 이용하여 제조된 $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$ 에피텍시의 성장에 미치는 영향
정영철,전본근,석전성,Jung, Young-Chul,Jun, Bon-Keun,Ishida, Makoto 한국센서학회 2000 센서학회지 Vol.9 No.5
In this paper, we propose the formation of an $Al_2O_3$ pre-layer using a protective Si-oxide layer and Al layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at $800^{\circ}C$ led to the growth of epitaxial $Al_2O_3$ layer on Si(111). And ${\gamma}-Al_2O_3$ layer was grown on the $Al_2O_3$ per-layer. Etching of the Si substrate by $N_2O$ gas could be avoided in the initial growth stage by the $Al_2O_3$ pre-layer. It was confirmed that the $Al_2O_3$ pre-layer was effective in improving the surface morphology of the very thin ${\gamma}-Al_2O_3$ films. 본 논문에서는 보호용 실리콘 산화층과 Al 층을 이용한 $Al_2O_3$ 예비층의 형성을 제안하였다. 실리콘 기판 위의 보호용 산화막 위에 알루미늄을 증착하고 이를 $800^{\circ}C$에서 열처리함으로써 에피텍시 $Al_2O_3$ 예비층 형성시킬 수 있었다. 그리고 형성된 $Al_2O_3$ 예비층위에 ${\gamma}-Al_2O_3$ 층을 형성하였다. ${\gamma}-Al_2O_3$막 성장시 공정의 초기 상태에서 발생하는 $N_2O$ 가스에 의한 Si 기판의 식각을 $Al_2O_3$ 예비층을 이용함으로써 방지할 수 있었다. $Al_2O_3$ 예비층이 초박막 ${\gamma}-Al_2O_3$의 표면의 형태를 개선하는데 많은 효과가 있었다.
보호용 실리콘 산화막을 이용하여 제조된 Al2O3 예비층이 초박막 γ - Al2O3 에피텍시의 성장에 미치는 영향
정영철(Young Chul Jung),전본근(Bon Keun Jun),석전성(Makoto Ishida) 한국센서학회 2000 센서학회지 Vol.9 No.5
In this paper, we propose the formation of an Al₂O₃ pre-layer using a protective Si-oxide layer and AI layer. Deposition of a thin film layer of aluminum onto a Si surface covered with a thin Si-oxide layer and annealing at 800 ℃ led to the growth of epitaxial Al₂O₃ layer on Si(111). And γ-Alzoa layer was grown on the Alzoa per-layer. Etching of the Si substrate by N₂O gas could be avoided in the initial growth stage by the Alms pre-layer. It was confirmed that the Al₂O₃ pre-layer was effective in improving the surface morphology of the very thin γ-Al₂O₃ films.