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        Mechanical Behavior of Embossed AA1050-O Sheets Subjected to Tension and Forming

        사비르므졸리,Carl Labergere,Marion Martiny,Mohamad Jrad,Guillaume Robin,김흥수,Francois Choquart 한국정밀공학회 2018 International Journal of Precision Engineering and Vol.19 No.10

        In this paper, experimental characterization of embossed aluminum sheets is performed using extensive mechanical tests. Rotary embossing is performed on these sheets in order to obtain a periodic hill-and-valley structure. The experimental program consists of realizing mechanical tests such as tension, deep drawing, and hydraulic bulge tests using embossed samples in order to build a database that can be used for future finite element modeling tasks. The tensile tests are performed using digital images correlation (DIC) for total displacement measurements and for detailed strain maps. The hydraulic bulge and deep drawing tests are conducted on embossed circular samples to study their formability. A comparison was made with the plane (non-embossed) sheets to explain the contribution of the embossed structure either in both cases of uniaxial and multiaxial loadings.

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        Study of the Fracture Mechanisms of Electroplated Metallization Systems Using In Situ Microtension Test

        사비르므졸리,Heung Soo Kim 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.4

        This framework assesses the mechanical behavior of some potential thin/thick metallization systems in use as either ohmiccontacts for diamond semi-conductors or for metallization on copper double bounded ceramic substrates present in the nextgenerationpower electronics packaging. The interesting and unique characteristic of this packaging is the use of diamondas a semi-conductor material instead of silicon to increase the lifetime of embedded power converters for use in aeronauticalapplications. Theoretically, such packaging is able to withstand temperatures of up to 300 °C without breaking thesemi-conductor, provided that the constitutive materials of the packaging are compatible. Metallization is very important toprotect the chips and substrates. Therefore, we address this issue in the present work. The tested metallization systems areNi/Au, Ni/Cr/Au and Ni/Cr. These specific systems were studied since they can be used in conjunction with existing bondingtechnologies, including AuGe soldering, Ag–In Transient liquid Phase Bonding and silver nanoparticle sintering. Themetallization is achieved via electrodeposition, and a mechanical test, consisting of a microtension technique, is carried outat room temperature inside a scanning electron microscopy chamber. The technique permits observations the cracks initiationand growth in the metallization to locate the deformation zones and identify the fracture mechanisms. Different failuremechanisms were shown to occur depending on the metallic layers deposited on top of the copper substrate. The density ofthese cracks depends on the imposed load and the involved metallization. These observations will help choose the metallizationthat is compatible with the particular bonding material, and manage mechanical stress due to thermal cycling so thatthey can be used as a constitutive component for high-temperature power electronics packaging.

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