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박성준,박세광 ( Sung June Park,Se Kwang Park ) 한국센서학회 1996 센서학회지 Vol.5 No.5
This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of lkgf/㎠, ±0.012%FS/℃ of TCO, and ±0.0896FS/℃ of TCS in the temperature range of -20∼+125℃. It showed ±0.2%FS of hysteresis and ±1.59%FS of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.