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50W 출력전력 특성을 갖는 0.25μm GaN-on-SiC HEMT
강동민(Dong-Min Kang),민병규(Byung-Gyu Min),이종민(Jong-Min Lee),윤형섭(Hyung-Sup Yoon),김성일(Sung-Il Kim),안호균(Ho-Kyun Ahn),조규준(Kyu-Jun Cho),김동영(Dong-Young Kim),이상흥(Sang-Heung Lee),김해천(Hae-Cheon Kim),임종원(Jong-Won L 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
This paper describes the successful development and the performance of a 50 W GaN-on-SiC High Electron Mobility Transistor(HEMT) The GaN HEMT with a gate length of 0.25μm and a total gate width of 12 mm were fabricated. The GaN HEMT provide a linear gain of 8 dB with 52 W output power operated at 30 V drain voltage in pulse operation with a pulse width 100 us and 10 % duty cycle at X-band. It also shows a maximum output power density of 4.16 W/mm. The X-band pulsed power amplifier exhibited an output power of 52 W(47.2 dBm) with a power gain of 11.5 dB in a frequency range of 9.2 – 9.5 GHz. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.
40W GaN-on-SiC HEMT 소자를 이용한 X-대역 전력증폭기
강동민(Dong-Min Kang),민병규(Byung-Gyu Min),이종민(Jong-Min Lee),윤형섭(Hyung-Sup Yoon),김성일(Sung-Il Kim),안호균(Ho-Kyun Ahn),임종원(Jong-Won Lim),남은수 대한전자공학회 2015 대한전자공학회 학술대회 Vol.2015 No.6
This paper describes the successful development and the performance of X-band 40 W pulsed power amplifier using a 40 W GaN-on-SiC High Electron Mobility Transistor(HEMT). The GaN HEMT with a gate length of 0.25 ㎛ and a total gate width of 12 mm were fabricated. The GaN HEMT provide a linear gain of 6 dB with 42 W output power operated at 30V drain voltage in pulse operation with a pulse width 100 ㎲ and 10 % duty cycle at X-band. It also shows a maximum output power density of 3.3 W/mm. The X-band pulsed power amplifier exhibited an output power of 42 W(46.2 dBm) with a power gain of 6 dB in a frequency range of 9.2 - 9.5 GHz.. This 40 W GaN HEMT and X-band 40 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.