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180nm CMOS를 이용한 5G FR1 밴드 광대역 저잡음증폭기 설계
노태림(Taerim Noh),강동휘(Donghwi Kang),김형준(Hyungjun Kim),김수현(Suhyun Kim),이옥구(Ockgoo Lee) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.11
This paper presents a broadband low noise amplifier(LNA) that can be implemented as onchip in FR1 band for next-generation 5G wireless mobile communication. Broadband characteristic is obtained through dual resonance of 1st stage and inter-stage without additional inductor and capacitor and broadband high order LC output matching. In the case of double resonance, the short/open of each stage impedance changes for each frequency band and resonates. Then S(1,1) is less than -10 dB in the operating area. In the case of broadband high order LC output matching, the existing LC filter is modified to as a high order. Simulated result of the proposed LNA represents 2.38~5.12 GHz bandwidth, 26.8 dB peak gain. And Noise Figure is 0.88~2.86 dB, OP1dB is 2.95 dBm at 4.25 GHz and IIP3 is -12.1 dBm at 3.25 GHz. It was confirmed that it has a gain of more than 20 dB in the operating band of the FR1 band and operates as a broadband.