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부스터 변환기를 위한 MOSFET 스위치 전류 감지 회로
민준식,노보미,김의진,이찬수,김영석,Min, Jun-Sik,No, Bo-Mi,Kim, Eui-Jin,Lee, Chan-Soo,Kim, Yeong-Seuk 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.9
In this paper, a high voltage current sensing circuit for boost converter is designed and verified by Cadence SPECTRE simulations. The current mirror pair, power and sensing metal-oxide semiconductor field effect transistors (MOSFETs) with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side lateral-diffused MOS transistor (LDMOST) switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35 ${\mu}m$ BCD process show that current sensing is accurate and the pulse frequency modulation (PFM) boost converter using the proposed current sensing circuit satisfies with the specifications.