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몰리브데넘 기반의 오믹 저항을 이용한 AlGaN/GaN 쇼키 다이오드 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),나제호(Jeho Na),고상춘(Sang-Choon Ko),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Schottky barrier diodes (SBDs) on AlGaN/GaN heterostructure are one of promising alternatives for high power switching device, because of their high switching speed, low on-resistance and large breakdown voltage. Lots of investigations are performed for the application of AlGaN/GaN SBD for rectifiers or devices in DC-DC converters and inverters. In this work, we investigated the optimal conditions of Mo-based ohmic contact for fabrication of AlGaN/GaN SBD devices, and characterized the fabricated AlGaN/GaN SBD devices using optimized ohmic condition with Mo-based ohmic metal..
CVD 다이아몬드 기판에 형성된 AlGaN/GaN 이종 구조위의 쇼키 다이오드의 열 특성
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),배성범(Sung-Bum Bae),남은수(Eunsoo Nam),임종원(Jong-Won Lim) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.6
High electron mobility transistors (HEMTs) and Schottky barrier diodes (SBDs) based on AlGaN/GaN heterostructures are well studied for application for high-frequency and/or high-power area. Widely distributed substrates for the high performance of RF applications are presently AlGaN/GaN on SiC and AlGaN/GaN on Si for high power performance. Because the thermal conductivity of CVD diamond substrate is high as 12 W/cm∙K, devices of AlGaN/GaN on CVD diamond are one of the excellent alternatives for power and RF applications, where the thermal conductivity of AlGaN/GaN on SiC is 4.9 W/cm∙K, and that of AlGaN/GaN on Si 1.3 W/cm∙K. In this work, we report the fabrication of SBD devices with 163.8 mm Schottky length. And also we investigated the thermal properties of the fabricated large scale SBD devices.
AlGaN/GaN 이종접합 구조의 게이트 영역 미세 조절 리세스를 이용한 상시불통형 전계효과 트랜지스터
김진식(Zin-Sig Kim),이형석(Hyung-Seok Lee),배성범(Sung-Bum Bae),안호균(Hokyun Ahn),이상흥(Sang-Heung Lee),임종원(Jong-Won Lim),강동민(Dong Min Kang) 대한전자공학회 2019 대한전자공학회 학술대회 Vol.2019 No.11
In this work, we fabricated normally-off FETs using gate recess techniques with extremely low rate dry etching conditions. We report also, a relationship between the Vth-shift and the recess depth under the gate area of FETs on AlGaN/GaN heterostructure. We confirmed also extremely low etching rate of 0.025 nm/s or 1.5 nm/min using Cl₂-based inductively coupled plasma etching process. Devices with different recess depths were fabricated, and determined the dependence of recess depth on Vth-shift. Without any etching-stop layers, it was achieved well targeted and good controlled recess depth under the gate region. With the extremely low rated dry etching conditions, we fabricated normally-off AlGaN/GaN FETs with high positive Vth of +5.64 V and the off-state leakage current as ~10<SUP>-6</SUP> A/mm.