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A Note on the M/G/1/K Queue with Two-Threshold Hysteresis Strategy of Service Intensity Switching
Doo Il Choi(최두일),Bo Keun Kim(김보근),Doo Ho Lee(이두호) 한국경영과학회 2014 韓國經營科學會誌 Vol.39 No.3
We study the paper Zhernovyi and Zhernovyi [Zhernovyi, K.Y. and Y.V. Zhernovyi, “An M <SUP>θ</SUP>/G/1/m system with two-threshold hysteresis strategy of service intensity switching,” Journal of Communications and Electronics, Vol.12, No.2(2012), pp.127-140]. In the paper, authors used the Korolyuk potential method to obtain the stationary queue length distribution. Instead, our note makes an attempt to apply the most frequently used methods : the embedded Markov chain and the supplementary variable method. We derive the queue length distribution at a customer"s departure epoch and then at an arbitrary epoch.
[Pd / Co]N / FeMn 다층막에서의 교환바이어스 수직자기이방성과 열적안정성
주호완(Ho-Wan Joo),안진희(Jin-Hee An),김보근(Bo-Keun Kim),김선욱(Sun-Wook Kim),이기암(Kee-Am Lee),황도근(Do-Geun Hwang),이상석(Sang-Suk Lee) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.4
Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in [Pd/Co]_N/FeMn multilayer deposited by dc magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21 ㎚, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15 ㎚. As the annealing temperature increases to 240℃, the Hex increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 330℃.
[Pd / Co]5 / FeMn 막에서의 바닥층과 삽입층에 의한 교환바이어스수직자기이방성
주호완(Ho Wan Joo),안진희(Jin Hee An),이미선(Mi Sun Lee),김보근(Bo Keun Kim),최상대(Sang Dea Choi),이기암(Kee Am Lee) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.5
Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn(15 ㎚) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 200℃ in about 50℃ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the Hex obtained the largest 127 Oe. And if Pd was a buffer layer, Hex obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.