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김남오(Nam-Oh Kim),민완기(Wan-Ki Min),김병철(Byung-Chal Kim),오금곤(Gum-Kon Oh),이강연(Kang-Yeon Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
In this paper, a β-FeSi₂ films with thicknesses of about 5㎛ were deposited on n-type silicon(111) substrates by RF magnetron sputtering method using a FeSi₂ target(99.99%). The wafers were rotated at 10rpm with the FeSi₂ target, flow rate of argon of 50sccm, substrate temperature of 100℃, RF power of 60 watts, deposition time of 60 minutes, and the vacuum of 7.5×10?³ Torr. The annealing treatments of a β-FeSi₂ thin film were performed from 600, 800 and 900℃ for 12h in air ambient by an electric furnace. In order to investigate the surface morphology of β-FeSi₂ thin films were measured with a atomic force microscopy(AFM). The Hall effect measured at low temperatures.