http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
강은구(Eun-Goo Kang),최병열(Byeong Yeol Choi),홍원표(Won-Pyo Hong),이석우(Seok-Woo Lee),최헌종(Hon-Zong Choi) 한국생산제조학회 2006 한국생산제조학회지 Vol.15 No.6
FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of Φ10nm and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than 1μm. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to Ga? ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.