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강경두(Kyung-Doo Kang),김진규(Jin-Gyu Kim) 대한전기학회 2019 전기학회논문지 Vol.68 No.1
The domestic overhead transmission lines use a vertical configuration and reverse phase arrangement, but when there is a limitation in steel tower height because the transmission lines pass a height limit zone or special zone, an application of triangular arrangement is necessary, and a study on the optimal phase arrangement to minimize inductive interference for this is necessary. If conductor arrangement are changed, the action of electrostatic induction and electromagnetic induction becomes different from before changes, so the changed conductor arrangement should be reviewed in terms of inductive interference. So this paper presents an optimal phase arrangement to reduce inductive interference by calculating electrostatic induction and electromagnetic induction according to conductor arrangement.
HF 전처리시 Si 기판 직접접합의 초기접합에 관한 연구
정귀상(Gwiy Sang Chung),강경두(Kyung Doo Kang) 한국센서학회 2000 센서학회지 Vol.9 No.2
Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH…(HOH…HOH…HOH…HOH)…OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/㎠-Max : 14.9kgf/㎠)
서로 다른 전극간격에서 이차전자 방출이 글로우 방전에 미치는 영향에 관한 연구
서정현(Jeong-Hyun Seo),강경두(Kyung-Doo Kang) 대한전기학회 2009 전기학회논문지 Vol.58 No.4
In this paper, the effect of the secondary electron emission coefficient of Xe ion on glow discharge was examined by 1D numerical simulation. The simulation was performed for two distinct structures, short and long gaps. The features of the glow discharges in the both structures, firing and sustain voltages, luminance, and efficiency, were analyzed at various secondary electron emission coefficient of Xe ion.
SDB 와 전기화학적 식각정지에 의한 마이크로 시스템용 매몰 공동을 갖는 SOI 구조의 제조
정귀상(Gwiy Sang Chung),강경두(Kyung Doo Kang),최성규(Sung Kyu Choi) 한국센서학회 2002 센서학회지 Vol.11 No.1
This paper describes a new process technique for batch process of SOI(Si-on-Insulator) structures with buried cavities for MEMS(Micro Electro Mechanical System) applications by SDB(Si-wafer Direct Bonding) technology and electrochemical etch-stop. A low-cast electrochemical etch-stop method is used to control accurately the thikness of SOI. The cavities were made on the upper handling wafer by Si anisotropic etching. Two wafers are with an intermediate insulating oxide layer. After high-temperature annealing(1000℃, 60 min.), the SDB SOI structure with buried cavities was thinned by electrochemical etch-stop. The surface of the fabricated SDB SOI structure have more roughness that of lapping and polishing by mechanical method. This SDB SOI structure with buried cavities will provide a powerful and versatile substrate for novel microsensors and microactuators.
정귀상,강경두 東西大學校 1999 동서논문집 Vol.5 No.-
Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, applied pressure and annealing temperature(200∼1000℃ ) after pre-bonding. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analysed by using SEM and IR camera, respectively Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 2.4kgf/㎠∼Max : 14.7kgf/㎠)
정귀상,강경두 東西大學校 2000 동서논문집 Vol.6 No.-
This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.