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성만영,정세진,김종열,조호열,이현석 고려대학교 공학기술연구소 1993 고려대학교 생산기술연구소 생기연논문집 Vol.29 No.1
The Current-Voltage characteristics of LIGBT is verified by SPICE simulation which includes design parameters and process parameters. Important parameter is lateral current gain(h_(fe)) of pup bipolar which consists of p-body, n^- layer and p^+ anode. This current gain is obtained from Ebers-Moll equation. On-resistance of LIGBT consists of channel resistance(R_E) and effective bulk-resistance(R2) which depend on biased gate voltage(V_G). Analysis and modeling of on-resistance are developed from physical structure(geometry and doping profiles) so that it is used in optimizing a design condition of devices.