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SOI웨이퍼의 마이크로가속도계 센서에 대한 열변형 유한요소해석
김옥삼,구본권,김일수,김인권,박우철 한국공작기계학회 2002 한국생산제조학회지 Vol.11 No.4
Silicon on insulator(SOI) wafer is used in a variety of microsensor in which thermal deformations and other mechanical effects may dominate device performance. One of major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is thermal deformations and thermal stresses. This paper deals with finite element analysis(FEA) of residual thermal deformations causing popping up, which are induced in micromaching processes of a microaccelerometer. The reason for this popping up phenomenon in manufacturing processes of microaccelerometer may be the bending of the whole wafer or it may come from the way the underetching occurs. We want to seek after the real cause of this popping up phenomenon and diminish this by changing manufacturing processes of microaccelerometer. In microaccelerometer manufacturing process, this paper intend to find thermal deformation change of the temperature distribution by tunnel gap and additional beams. The thermal behaviors analysis intend to use ANSYS V5.5.3.